Fundamentals of RF/Microwave Bandpass Filter Design

Abstract

This chapter presents the basic approach of microwave bandpass filter design for 5G network applications. The chapter serves as a reference source to microwave stakeholders with little or no filter design experience. It should help them to design and implement their first filter device using microstrip technology. A three-pole Chebyshev bandpass filter with centre frequency of 2.6 GHz, fractional bandwidth of 3%, passband ripple of 0.04321 dB, and return loss of 20 dB has been designed. The designed filter implementation is based on the Rogers RT/Duroid 6010LM substrate with a 10.7 dielectric constant and 1.27 mm thickness. The circuit model and microstrip layout results of the BPF are presented and show good agreement. The microstrip layout simulation results show that a less than 1.8 dB minimum insertion loss and a greater than 25 dB in-band return loss were achieved. The overall device size of the BPF is 18.0 mm by 10.7 mm, which is equivalent to 0.16λg x 0.09λg, where λg is the guided wavelength of the 50 Ohm microstrip line at the filter centre frequency.

Photon-accelerated millimeter-wave sub-1nm CMOS technology: comparison of performance for quantum, optical, and terahertz processors and RF ASICs

“…This is a "positive feedback" loop. Please notice -by applying a very low voltage (< 1.0V), the output current and light intensity from an LED can be sufficiently high to turn on and sustain the operation for the entire optoelectronic CMOS, with suitable bandgap engineering [5]. Figure 4 illustrates how Quantum Dots Lasers can be integrated with a CMOSFET.…”