Further Investigation on Mechanism of Trap Level Modulation in Silicon Nitride Films by Fluorine Incorporation

Impact of hydrogen plasma treatment on fluorine-contained silicon nitride films

“…In the same way, fluorine atoms in the SiN film also make the trap energy hole trap level shallower. [22][23][24][25] On the other hand, it has been reported that the hydrogen in SiO 2 films, which exists as hydrogen bridges and hydroxyl E' centers, can be eliminated through hydrogen remote plasma treatment. 26) For instance, hydrogen can be removed through the reaction of Si H H Si H 2 ⟶ • º -+ º + * by providing atomic hydrogen.…”

“…The estimated energy level of the trap is less than 1 eV. 23,24) On the other hand, it has been reported that the hydrogen in SiO 2 films can be eliminated by the hydrogen remote plasma process. 25) The interfacial layers of SiO 2 in high-k/metal gate stacks are ultra-thin and contain hydrogen, including hydrogen bridges and hydroxyl E' centers.…”

Nanoscale observation of subgap excitations in β-Si3N4 with a high refractive index using low-voltage monochromated STEM: a new approach to analyze the physical properties of defects in dielectric materials

“…3,4) Its electrical properties are known to be sensitive to changes in elemental composition and material structure during the manufacturing process. [5][6][7][8][9] Correlations between electrical properties and electronic structures 10,11) have been studied in detail by means of electrical 12,13) and optical measurements. [13][14][15][16] On the other hand, nanoscale spatial resolution is required to investigate the local physical properties and their spatial distributions over the entire structures of devices.…”