Fusion bonding of rough surfaces with polishing technique for silicon micromachining

Chen, Gui; Albers, H.; Gardeniers, Johannes G.E.; Elwenspoek, Michael Curt; Lambeck, Paul

doi:10.1007/s005420050068

Cited by 34 publications

(24 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Surface impurities seem to be ubiquitous in LPCVD SiN films. Surface roughness of untreated LPCVD SiN has found to be in the range of 0.3 -3 nm [42,44]. Hence, surface roughness can become a significant fraction of the total SiN thin film thickness.…”

Section: Arxiv:14056115v2 [Cond-matmes-hall] 18 Jun 2014mentioning

confidence: 99%

Evidence of Surface Loss as Ubiquitous Limiting Damping Mechanism in SiN Micro- and Nanomechanical Resonators

2014

View full text Add to dashboard Cite

Silicon nitride (SiN) micro-and nanomechanical resonators have attracted a lot of attention in various research fields due to their exceptionally high quality factors (Qs). Despite their popularity, the origin of the limiting loss mechanisms in these structures has remained controversial. In this paper we propose an analytical model combining acoustic radiation loss with intrinsic loss. The model accurately predicts the resulting mode-dependent Qs of a low-stress silicon-rich and a highstress stoichiometric SiN membrane. The large acoustic mismatch of the low-stress membrane to the substrate seems to minimize radiation loss and Qs of higher modes (n ∧ m ≥ 3) are limited by intrinsic losses. The study of these intrinsic losses in low-stress membranes with varying lengths L and thicknesses h reveals an inverse linear dependence of the intrinsic loss with h for thin resonators independent of L. This finding was confirmed by comparing the intrinsic dissipation of arbitrary (membranes, strings, and cantilevers) SiN resonators extracted from literature, suggesting surface loss as ubiquitous damping mechanism in thin SiN resonators with Q surf = β · h and β = 6 × 10 10 ± 4 × 10 10 m −1 . Based on the intrinsic loss the maximal achievable Qs and Q · f products for SiN membranes and strings are outlined.Since the discovery of the exceptionally high quality factors (Q) of nanomechanical silicon nitride (SiN) resonators [1, 2], SiN strings and membranes have become the centerpiece of many experiments in the fields of cavity optomechanics [3][4][5][6][7][8][9][10][11][12][13] and sensor technology [14][15][16][17][18][19]. For example in cavity optomechanics a high Q at high frequencies is required in order to advance towards the quantum regime of the mechanical resonators, and in resonant sensors a high Q enables a better resolution. Despite the continuous effort to understand and optimize Q of SiN resonators, the underlying source of the limiting mechanism has remained controversial. On the one hand it has been suggested by several groups that SiN resonators are limited by intrinsic losses [20][21][22]. On the other hand it has recently been suggested that radiation loss is the limiting factor for Q in SiN membranes [23]. In this paper we show that a model which combines intrinsic and acoustic radiation losses accurately predicts the mode-dependent Qs of low-and high-stress SiN membranes. Finally, we show that the intrinsic loss in thin arbitrary SiN resonators scales with thickness. This is evidence that surface loss is the ubiquitous limiting damping mechanism in micro-and nanomechanical SiN resonators, such as strings, membranes, and cantilevers.The exceptionally high Qs of SiN resonators originate from the high intrinsic tensile stress σ which increases the stored energy without significantly increasing the energy loss during vibration [20,21,24]. Assuming the energy loss to be coupled to the local out-of-plane bending during vibration, the intrinsic quality factor of a square membrane under tensile stress Q intr,σ is...

show abstract

Section: Arxiv:14056115v2 [Cond-matmes-hall] 18 Jun 2014mentioning

confidence: 99%

Evidence of Surface Loss as Ubiquitous Limiting Damping Mechanism in SiN Micro- and Nanomechanical Resonators

2014

View full text Add to dashboard Cite

show abstract

“…CMP was carried out with an PRES1 E460 polishing machine which has a single polisher. Using various polishing pads and slurries, the surface roughnesses of different levels can be obtained [14]. Wet chemical etching processes, such as HF etching and KOH etching, were also used in the modification of wafer surfaces.…”

Section: Experimental and Resultsmentioning

confidence: 99%

The surface adhesion parameter: a measure for wafer bondability

Chen

Elwenspoek

Tas

et al. 1999

Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Syst

Self Cite

View full text Add to dashboard Cite

A theory is presented which describes the initial direct wafer bonding process. The effect of surface microroughness on the bondability is studied on the basis of the theory of contact and adhesion of elastic solids. An effective bonding energy, the maximum of which is the specific surface energy of adhesion, is proposed to describe the real binding energy of the bonding interface including the influence of the wafer surface microroughness. Both the effective bonding energy and the real area of contact between rough surfaces depend on a dimensionless surface adhesion parameter, B. Using the adhesion parameter as a measure, three kinds of wafer contact interfaces can be identified with respect to their bondability; vu. the nonbonding regime ( B >% 12), the bonding regime (0 <= l), and the adherence regime ( 1 < B < 12). Experimental data are in agreement with this theory.

show abstract

“…To enable direct bonding between PECVD SiO and Si, a CMP process on the PECVD SiO layer surface is necessary [19]. Fig.…”

Section: Chemical Mechanical Polishingmentioning

confidence: 99%

Electrostatically actuated mechanooptical waveguide ON-OFF switch showing high extinction at a low actuation-voltage

Veldhuis

Nauta

Chen

et al. 1999

IEEE J. Select. Topics Quantum Electron.

Self Cite

View full text Add to dashboard Cite

Abstract-This paper reports on an integrated mechanooptical waveguide ON-OFF switch, where an absorbing element is moved into and out of the evanescent field of the guided mode in order to achieve switching. For the electrostatically driven devices, an extinction ratio of 65 dB at an actuation voltage of 2.5 V has been achieved in a 9.5-mm-long device for a wavelength of 632.8 nm. The calculated mechanical fundamental resonance frequency is 1.95 kHz. The device design enables future vacuum sealing that will annihilate the squeeze damping which, in the present device, reduces the response time to 10 s. Full-wafer scale fabrication is enabled by using standard silicon technology, chemical mechanical polishing and aligned wafer bonding. The devices can be used for channel selection purposes in integrated optical sensor arrays.Index Terms-Chemical mechanical polishing, integrated optic nanomechanical effect, integrated optics, microelectromechanical devices, micromechanooptical devices, optical modulators, wafer bonding, waveguide attenuators.

show abstract

Fusion bonding of rough surfaces with polishing technique for silicon micromachining

Cited by 34 publications

References 11 publications

Evidence of Surface Loss as Ubiquitous Limiting Damping Mechanism in SiN Micro- and Nanomechanical Resonators

Evidence of Surface Loss as Ubiquitous Limiting Damping Mechanism in SiN Micro- and Nanomechanical Resonators

The surface adhesion parameter: a measure for wafer bondability

Electrostatically actuated mechanooptical waveguide ON-OFF switch showing high extinction at a low actuation-voltage

Contact Info

Product

Resources

About