Future of microelectromechanical systems (MEMS)

Bao, Ming; Wang, Weiyuan

doi:10.1016/0924-4247(96)01274-5

Cited by 139 publications

(73 citation statements)

References 7 publications

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“…The relationship between Young's modulus and the density for the different materials is: Thus, the wrinkle stress of film ( f w ) at the film/substrate interface can be expressed as eq. (6).…”

Section: Discussionmentioning

confidence: 99%

“…As important components in ultra-large-scale integrated circuits (ULSI) 1,2) and microelectromechanical systems (MEMS), [3][4][5][6] metallic films contribute a lot to the transmission, interconnection, radiating, screening, etc., and hence significantly affected the performance and the reliability of integrated devices. With size of components in devices decreasing to micron, sub-micron, or even nanometer scale, the performances and deformation behavior of metallic films are inevitable to be degraded by the impacts of heat, electricity and residual stress.…”

Section: Introductionmentioning

confidence: 99%

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SEM <I>In Situ</I> Study on Deformation Behavior of Cu and Cu/Ni Films under Three-Point Bending

2007

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The deformation and failure of Cu and Cu/Ni film/substrate structure were studied by the scanning electron microscope (SEM) in situ observation under three-point bending. It was found that the rapid deformation occurred at sites near to the interface of film/substrate in Cu and Cu/Ni films. The transferring of deformation finally caused the surface wrinkle. The wrinkle stress can be expressed asBased on the results in mesoscale, a simple failure mechanism of films/substrate structure is suggested to understand the transferring process of deformation and failure characteristics.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

SEM <I>In Situ</I> Study on Deformation Behavior of Cu and Cu/Ni Films under Three-Point Bending

2007

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“…Microelectromechanical systems (MEMS) are integrated devices that combine electrical and mechanical components [Bao & Wang, 1996]. Resonant sensors are a class of MEMS devices whose applications include the measurement of acceleration, pressure, mass change, etc.…”

Section: Introductionmentioning

confidence: 99%

A Kicked Oscillator as a Model of a Pulsed Mems System

Blokhina

Feely

2009

Int. J. Bifurcation Chaos

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In this paper, we study the behaviour of a MEMS oscillator by applying methods of nonlinear dynamics. We model the system as a kicked damped oscillator and obtain the iterative maps that describe the MEMS system. The dynamics of the maps are studied numerically: we present a study of limit cycles and their rotation numbers and show how the control parameters and initial conditions may affect the output frequencies.

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“…Some of the applications of MEMS are motion sensing, optical switching, mechanical actuators [43,47,48], chemical sensors [43,48], and photonic applications [43,49]. Adhesion, friction and wear at the nanometer size scale become critical and can be detrimental to the efficiency, power output and reliability of MEMS devices [50,51].…”

Section: Ald For Nanotechnology Application a Mems Devicesmentioning

confidence: 99%

A Review of Atomic Layer Deposition for Nanoscale Devices

Riyanto

Rijanto

Prawara

2012

J. Mechatron. Electr. Power Veh. Technol.

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Atomic layer deposition (ALD) is a thin film growth technique that utilizes alternating, self-saturation chemical reactions between gaseous precursors to achieve a deposited nanoscale layers. It has recently become a subject of great interest for ultrathin film deposition in many various applications such as microelectronics, photovoltaic, dynamic random access memory (DRAM), and microelectromechanic system (MEMS). By using ALD, the conformability and extreme uniformity of layers can be achieved in low temperature process. It facilitates to be deposited onto the surface in many variety substrates that have low melting temperature. Eventually it has advantages on the contribution to the wider nanodevices.Key words: thin coating, atomic layer deposition, nanoscale devices. Abstrak Atomic layer deposition (ALD) adalah teknik penumbuhan lapisan tipis yang menggunakan reaksi kimia jenuh antara gas pendahulu untuk mendapatkan deposisi lapisan skala nano. Teknik ini menjadi subyek yang sangat menarik saat ini untuk deposisi lapisan sangat tipis pada berbagai aplikasi seperti mikroelektronik, photovoltaic, dynamic random access memory (DRAM) dan sistem mikroelektromekanik (MEMS

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Future of microelectromechanical systems (MEMS)

Cited by 139 publications

References 7 publications

SEM <I>In Situ</I> Study on Deformation Behavior of Cu and Cu/Ni Films under Three-Point Bending

SEM <I>In Situ</I> Study on Deformation Behavior of Cu and Cu/Ni Films under Three-Point Bending

A Kicked Oscillator as a Model of a Pulsed Mems System

A Review of Atomic Layer Deposition for Nanoscale Devices

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