Future trends in high‐power bipolar metal‐oxide semi‐conductor controlled power semi‐conductors

Rahimo, Munaf

doi:10.1049/iet-cds.2013.0220

Cited by 26 publications

(18 citation statements)

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“…Nowadays, the thin-wafer technology has paved its wave for various ratings of IGBT modules with high performance and reliability [57][58]. This is to say such a severe self-heating effect inside the device cannot be ignored any longer under the ΔT SC (T start =400K) 204K 24K…”

Section: Interaction Investigation Of 3d-scsoa Characteristicsmentioning

confidence: 99%

Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

Chen

Iannuzzo

et al. 2018

IEEE Trans. Power Electron.

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IGBT short-circuit failure modes have been under research for many years, successfully paving the way for device short-circuit ruggedness improvement. The aim of this paper is to classify and discuss the recent contributions about IGBT short-circuit failure modes, in order to establish the current state of the art and trends in this area. First, a 3D-SCSOA is introduced as the IGBT's operational boundary to divide the short-circuit failure modes of device into short-circuit VDC/Vrated-ISC SOA limiting and short-circuit endurance time limiting groups. Then, the discussion is centered on currently reported IGBT short-circuit failure modes in terms of their relationships with the 3D-SCSOA characteristics. In addition, further investigation on the interaction of 3D-SCSOA characteristics is implemented to motivate advanced contributions in future dependency research of device short-circuit failure modes on temperature. Consequently, a comprehensive and thoughtful review of where the development of short-circuit failure mode researches of IGBT stands and is heading is provided.Index terms-High power IGBTs, Short-circuit failure mode, 3D-SCSOA, Self-heating, Temperature dependencyNone of the material in this paper has been published or is under consideration for publication elsewhere.

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Section: Interaction Investigation Of 3d-scsoa Characteristicsmentioning

confidence: 99%

Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

Chen

Iannuzzo

et al. 2018

IEEE Trans. Power Electron.

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“…The SPT buffer is optimized to stop the field penetration during the blocking state while still allowing conductivity modulation to occur during conduction. Therefore, the new SPT-IGBT combined the advantages of the low-loss PT-IGBT and the positive temperature coefficient and soft turn-off behavior of the NPT-IGBT [3].…”

Section: Commercial Igbt Chip Technology Reviewmentioning

confidence: 99%

Reliability-oriented IGBT selection for high power converters

Wang

Najmi

Burgos

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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This paper presents a methodology to select IGBT in the reliability-oriented design of high power converters. The failure rate models are presented and the main contributors are analyzed. A review of commercial IGBT chip technologies is conducted, which are used in the later IGBT selections. The reliability models of the power module that includes the IGBTs and other components are built by Markov-Chain Model. Finally, a methodology to conduct the IGBT selection process is developed and illustrated by a given design example, with the goal of the highest power module reliability by selecting the most appropriate IGBTs.

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“…The Insulated-Gate Bipolar Transistor (IGBT) has firmly established itself in high-voltage and high-current applications, handling power outputs ranging from a few kW to several MW in the power electronics industry [1]. Despite of its great success, many challenges are ahead to meet the future highreliability targets, in response to the ever increasing demands for more renewable energy applications.…”

Section: Introductionmentioning

confidence: 99%

Improving the Short-Circuit Reliability in IGBTs: How to Mitigate Oscillations

Reigosa

Iannuzzo

Rahimo

et al. 2018

IEEE Trans. Power Electron.

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Abstract-In this paper, the oscillation mechanism limiting the ruggedness of IGBTs is investigated through both circuit and device analysis. The work presented here is based on a timedomain approach for two different IGBT cell structures (i.e., trench-gate and planar), illustrating the 2-D effects during one oscillation cycle. It has been found that the gate capacitance varies according with the strength of the electric field near the emitter, which in turn leads to charge-storage effects associated with low carrier velocity. For the first time, it has been discovered that a parametric oscillation takes place during the short-circuit in IGBTs, whose time-varying element is the Miller capacitance, which is involved in the amplification mechanism. This hypothesis has been validated through simulations and its mitigation is possible by increasing the electric field at the emitter of the IGBT with the purpose of counteracting the Kirk Effect.

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Future trends in high‐power bipolar metal‐oxide semi‐conductor controlled power semi‐conductors

Cited by 26 publications

References 50 publications

Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

Reliability-oriented IGBT selection for high power converters

Improving the Short-Circuit Reliability in IGBTs: How to Mitigate Oscillations

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