2019
DOI: 10.1007/s10854-019-00794-3
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Ga doping of nanocrystalline CdS thin films by electrodeposition method for solar cell application: the influence of dopant precursor concentration

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Cited by 8 publications
(1 citation statement)
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“…This shift was associated with the incorporation (substitution and/or interstitial site) of the doping atom in the crystal lattice of the CdS thin films, and the lower shifts observed in the peak position were due to the effective ionic radius of the doped atoms. [22] The grain sizes of samples are computed with the modified Scherrer plot based on the following formula [23] :…”
Section: Xrd Investigationsmentioning
confidence: 99%
“…This shift was associated with the incorporation (substitution and/or interstitial site) of the doping atom in the crystal lattice of the CdS thin films, and the lower shifts observed in the peak position were due to the effective ionic radius of the doped atoms. [22] The grain sizes of samples are computed with the modified Scherrer plot based on the following formula [23] :…”
Section: Xrd Investigationsmentioning
confidence: 99%