Ga(In)N Photonic Crystal Light Emitters with Semipolar Quantum Wells

Heinz, Dominik; Leute, Robert A. R.; Kizir, Seda; Li, Yijia; Meisch, Tobias; Thonke, Klaus; Scholz, F.

doi:10.7567/jjap.52.062101

Cited by 4 publications

(6 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…All dimensions must be restricted to a few hundred nanometers, beyond the limitations of conventional optical lithography. Previously, we have reported on nanostructuring for selective area epitaxy based on laser interference lithography (LIL) for LED [17] and photonic crystal applications [18]. However, the LIL samples still suffered from mask irregularities and the structured area was limited to some cm 2 , which is why an alternative structuring method was used as described in the following.…”

Section: Selective Growth For Semipolar Quantum Wellsmentioning

confidence: 99%

Blue to true green LEDs with semipolar quantum wells based on GaN nanostripes

Leute

Wang

Meisch

et al. 2015

physica status solidi c

Self Cite

View full text Add to dashboard Cite

Recent advances of the performance of GaN based devices with semipolar quantum wells have been realized homoepitaxially on pseudo bulk substrates which are typically small in size and high in cost. These limitations fuel the search for cheap and large area alternatives. Heteroepitaxial growth on sapphire substrates is well established with excellent results for polar GaN structures ‐ the growth of semipolar gallium nitride on sapphire, however, presents unique challenges. In order to profit from our expertise in c‐plane samples, our semipolar gallium nitride growth experiments are based on growth in c‐direction. Using selective area epitaxy (SAE) on c‐oriented templates, we can grow 3D structures with semipolar side facets. These structures are typically several μm in size which constitutes further challenges for device processing. Reducing the size of the structures to a sub‐μm scale, we are able to bury our semipolar QWs within planar layers resulting in flat samples with c‐plane surfaces. In this contribution, we present our results concerning the structural quality and spectral properties of quantum wells emitting in the blue and green spectral range as well as light emitting diodes. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Section: Selective Growth For Semipolar Quantum Wellsmentioning

confidence: 99%

Blue to true green LEDs with semipolar quantum wells based on GaN nanostripes

Leute

Wang

Meisch

et al. 2015

physica status solidi c

Self Cite

View full text Add to dashboard Cite

show abstract

“…A major challenge was the patterning of the mask layer. First attempts using laser interference lithography following a Lloyd's mirror arrangement () resulted in periods around 220 nm, for which strong resonance effects could be observed (). However, these structures suffered from limited stripe to stripe uniformity and other lithography irregularities (Fig.…”

Section: Sub‐micrometer Structuresmentioning

confidence: 99%

Semipolar GaN‐based heterostructures on foreign substrates

Scholz

Caliebe

Gahramanova

et al. 2015

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

This paper reviews our recent investigations about semipolar GaN‐based optoelectronic heterostructures grown on foreign substrates. Two basically different approaches are discussed, both making use of epitaxial growth in the polar c‐direction to minimize any crystalline defects. By selective area growth, stripes with triangular cross‐section have been formed with semipolar side‐facets, on which quantum well and electroluminescence test structures have been deposited. By careful optimisation of many growth parameters, we could drastically increase the growth temperature of GaInN quantum wells emitting beyond 500 nm. In the second approach, the GaN growth starts on inclined sapphire c‐planes, which form the side facets of trenches etched into the substrates. After coalescence, planar semipolar GaN layers can be achieved. We investigated various sapphire wafer orientations leading to {112‾2}, {101‾1}, and {202‾1} layers. After careful optimisation with a major focus on the decrease of the stacking fault density, we have also investigated the doping behaviour of such semipolar structures. Eventually, full electroluminescence test structures could be grown.

show abstract

“…In the final step, the active region was capped with p‐doped GaN resulting in a homogeneous and planar surface. Further information on growth conditions and processing can be found in .…”

Section: Sample Growthmentioning

confidence: 99%

“…For conventional device processing a planarization of the surface is favorable. To achieve the planarization of the three‐dimensional structures a shrinking of the semipolar active region to nanometer scale is essential .…”

Section: Introductionmentioning

confidence: 99%

Nanoscale cathodoluminescene imaging of III‐nitride‐based LEDs with semipolar quantum wells in a scanning transmission electron microscope

Müller

Schmidt

Metzner

et al. 2015

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

The optical and crystalline properties of a c‐plane GaN‐based LED structure with embedded semipolar InGaN quantum wells (QW) were investigated using highly spatially resolved cathodoluminescence spectroscopy (CL) directly performed in a scanning transmission electron microscope (STEM). Direct correlation of the cross‐sectional STEM image with the simultaneously recorded spatially resolved CL mapping at room‐temperature reveals the most intense emission coming from the semipolar InGaN QWs. We observe an inhomogeneous wavelength distribution due to local indium fluctuations and varying QW thickness. In contrast, the donor‐acceptor pair recombination (DAP) becomes the dominating luminescence process at 16 K resulting in a superposition of the DAP luminescence and the InGaN QW emission.

show abstract

Ga(In)N Photonic Crystal Light Emitters with Semipolar Quantum Wells

Cited by 4 publications

References 32 publications

Blue to true green LEDs with semipolar quantum wells based on GaN nanostripes

Blue to true green LEDs with semipolar quantum wells based on GaN nanostripes

Semipolar GaN‐based heterostructures on foreign substrates

Nanoscale cathodoluminescene imaging of III‐nitride‐based LEDs with semipolar quantum wells in a scanning transmission electron microscope

Contact Info

Product

Resources

About