GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application

Asbeck, P.M.; Chang, Mau-Chung Frank; Higgins, J.A.; Sheng, N.H.; Sullivan, G.J.; Wang, K.-C.

doi:10.1109/16.40886

Cited by 199 publications

(13 citation statements)

References 24 publications

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“…As the bias was lowered from 5 to 4 V, the noise figure decreased by about 1 dB, but the amplifier gain dropped by 1 dB as well. This noise figure compares to the 4-dB optimum noise figure previously reported for single IIBT's [5].…”

Section: Amplifier Measurementssupporting

confidence: 67%

Performance and applications of a 1-element HBT grid amplifier

Rutledge

Kim

Sovero

et al.

Proceedings of 1993 Asia Pacific Microwave Conference (APMC'93)

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A 100-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction bipolar transistor (HBT) differential pairs that include a resistive network to provide self-bias to the base. The planar metal grid structure was empirically designed to provide effective coupling between the HBT's and free space. The peak gain of the grid was 10 dB at 10 GHz with a 3 dB bandwidth of 1 GHz. Tlie input and output matches are better than 15 dB at 10 GHz. The maximum output power is 450 mW, and the minimum noise figure is 7 dB. Tests show that the grid is quite tolerant of failures-the output power dropped by only l d B when the 10% of the inputs were detuned. The device amplifies beams with incidence angles up to 30' with less than a 3-dB drop in power. By providing external feedback with a twist reflector, the grid amplifier can be used as a broadband tunable source. This source could be tuned from 6.5 GHz to 11.5 GHz with a peak effective radiated power (ERP) of 6.3 W at 9.9 GHz.

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Section: Amplifier Measurementssupporting

confidence: 67%

Performance and applications of a 1-element HBT grid amplifier

Rutledge

Kim

Sovero

et al.

Proceedings of 1993 Asia Pacific Microwave Conference (APMC'93)

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“…Analogue device performance compares well with GaAs MESFETs: a minimum noise figure of 2 dB at 16 GHz with a 10 dB associated gain has been reported [30]. High speed digital devices and circuits have also been made: a CML divide-by-4 circuit operating at 26.9 GHz; a yield of 87 % on circuits operating above 20 GHz was achieved with these devices [30]. A remarkable achievement in HBT technology is the Texas Instuments 32-bit microprocessor containing 12,900 equivalent NOR gates and operating at over 100 MHz clock speed [31].…”

Section: Heterojunction Bipolar Transisorsmentioning

confidence: 75%

Section: Heterojunction Bipolar Transisorsmentioning

confidence: 91%

Reconstruction of the (001) Surface of Si from Molecular Dynamics

Holender¹,

Jędrzejek²

1991

Acta Phys. Pol. A

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The device applications of gallium arsenide and related Ill-V compound and alloy semiconductors are reviewed. A range of electronic devices is described, and the current state of the art performance is indicated for each type of device. The devices which will be described are: transferred electron devices -as oscillators up to 200 GHz, GaAs MESFETs -the workhorse microwave solid state device, some monolithic microwave integrated circuit /MMIC/, and heterojunction devices. The use of molecular beam epitaxy MBE to grow I l l -V s e m i c o n d u c t o r s w i t h g r e a t c o n t r o l o v e r t h e d o p i n g , m o l e f r a c t i o n o f t h e constituents and the thickness of the epilayer has permitted the construction of devices with atomically abrupt interfaces between regions of different doping and alloy. The electronic devices which make use of such abrupt heter o -j u n c t i o n s i n c l u d e : h i g h e l e c t r o n m o b i l i t y t r a n s i s t o r s , h e t e r o j u n c t i o n b i p o l a r transistor, and laser diodes. A number of novel devices based on multiple barrier and quantum well structures is also described, including Resonant Tunneling Devices.

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“…1,2 Significant progress in growth and fabrication technology has already been achieved. 1,2 Significant progress in growth and fabrication technology has already been achieved.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor

Chen

Wang

Pan

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Effect of composite collector design on the breakdown behavior of InGaP/GaAs double heterojunction bipolar transistor J. Appl. Phys. 93, 605 (2003); 10.1063/1.1521513Minority carrier lifetime degradation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition An InGaP/GaAs heterojunction bipolar transistor with a ␦-doped sheet structure has been fabricated successfully. High current gain, especially in the very low collector current regime, low collector-emitter offset voltage (⌬V CE ) characteristics are obtained. There is an extremely small offset voltage of about 55 meV due to the elimination of the potential spike at the emitter-base heterojunction by a ␦-doped sheet and a 50 Å very thin setback layer. On the other hand, the high current gain of 280 also reveals that the degradation of current gain due to the potential spike can be avoided. In addition, the influence of the ␦-doped sheet and the undoped setback on device properties is studied.

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GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for application

Cited by 199 publications

References 24 publications

Performance and applications of a 1-element HBT grid amplifier

Performance and applications of a 1-element HBT grid amplifier

Reconstruction of the (001) Surface of Si from Molecular Dynamics

Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor

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