Characteristics of InGaP/GaAs delta-doped heterojunction bipolar transistor

Abstract

Effect of composite collector design on the breakdown behavior of InGaP/GaAs double heterojunction bipolar transistor J. Appl. Phys. 93, 605 (2003); 10.1063/1.1521513Minority carrier lifetime degradation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metalorganic chemical vapor deposition An InGaP/GaAs heterojunction bipolar transistor with a ␦-doped sheet structure has been fabricated successfully. High current gain, especially in the very low collector current regime, low collector-emitter offset voltage (⌬V CE ) characteristics are obtained. There is an extremely small offset voltage of about 55 meV due to the elimination of the potential spike at the emitter-base heterojunction by a ␦-doped sheet and a 50 Å very thin setback layer. On the other hand, the high current gain of 280 also reveals that the degradation of current gain due to the potential spike can be avoided. In addition, the influence of the ␦-doped sheet and the undoped setback on device properties is studied.

Quantitative analysis of dc characteristics of Ga0.5In0.5P/GaAs heterojunction bipolar devices

“…Design and simulation of HBTs have been done using analytical formulations 8,9 as well as with 2D-device simulators such as Atlas. 10,11 Using Atlas, many workers have studied HBT DC characteristics, but hardly, these are compared with experimental data at higher range of base to emitter voltage.…”