GaAs/AlGaAs double heterostructure high electron mobility transistors

Sheng, N.H.; Lee, C.P.; Chen, R.T.; Miller, David L.

doi:10.1109/iedm.1984.190721

Cited by 14 publications

(4 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Ideally, the buffer layer should be as thin as possible so that isolation, by device processing compatible mesa etching, can be effected down to the SI substrate. This may be best accomplished by inclusion of a few period superlattice structures which would also minimize propagation of impurities and defects from the GaAs substrate [4]- [6] and reduce the minimum thickness requirements of the high purity buffer layer. In the case of planar processing, ion-implantation isolation, carried out prior to deposition of gate and first-level interconnect metallization, may be more effective for reducing backgate leakage current.…”

Section: Discussionmentioning

confidence: 99%

Backgating characteristics of MODFET structures

Ezis

Langer²

1985

IEEE Electron Device Lett.

View full text Add to dashboard Cite

Section: Discussionmentioning

confidence: 99%

Backgating characteristics of MODFET structures

Ezis

Langer²

1985

IEEE Electron Device Lett.

View full text Add to dashboard Cite

“… 17 The band gap is direct up to 1.98 eV, which corresponds to an Al content of ∼45%. 17 Therefore, the planar GaAs/AlGaAs material system has led to a wide range of applications over the past few decades, including high-electron-mobility transistors, 18 quantum well (QW) infrared detectors, 19 and near-infrared laser diodes. 20 …”

Section: Introductionmentioning

confidence: 99%

“…17 The band gap is direct up to 1.98 eV, which corresponds to an Al content of ∼45%. 17 decades, including high-electron-mobility transistors, 18 quantum well (QW) infrared detectors, 19 and near-infrared laser diodes. 20 AlGaAs has been successfully incorporated in GaAs NWs for a range of structures, using different growth techniques.…”

Section: ■ Introductionmentioning

confidence: 99%

Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

Boras

Fonseka

et al. 2021

J. Phys. Chem. C

View full text Add to dashboard Cite

Self-catalyzed AlGaAs nanowires (NWs) and NWs with a GaAs quantum dot (QD) were monolithically grown on Si(111) substrates via solid-source molecular beam epitaxy. This growth technique is advantageous in comparison to the previously employed Au-catalyzed approach, as it removes Au contamination issues and renders the structures compatible with complementary metal–oxide–semiconductor (CMOS) technology applications. Structural studies reveal the self-formation of an Al-rich AlGaAs shell, thicker at the NW base and thinning towards the tip, with the opposite behavior observed for the NW core. Wide alloy fluctuations in the shell region are also noticed. AlGaAs NW structures with nominal Al contents of 10, 20, and 30% have strong room temperature photoluminescence, with emission in the range of 1.50–1.72 eV. Individual NWs with an embedded 4.9 nm-thick GaAs region exhibit clear QD behavior, with spatially localized emission, both exciton and biexciton recombination lines, and an exciton line width of 490 μeV at low temperature. Our results demonstrate the properties and behavior of the AlGaAs NWs and AlGaAs/GaAs NWQDs grown via the self-catalyzed approach for the first time and exhibit their potential for a range of novel applications, including nanolasers and single-photon sources.

show abstract

“…This is because the two-dimensionally quantized electron gas (2DEG) at the hetero-interface exhibits very high mobility due to separation from the ionized impurity atoms. To further improve device performance using the highmobility characteristics of modulation-doped heterojunction structures, much attention has been paid to doubleheterojunction FET's (DHFET's) [3], [4] owing to recent progress in heterojunction device fabrication technology. The double-heterojunction structure (DH) provides twice the carrier density N, as SH.…”

Section: Introductionmentioning

confidence: 99%

Modeling for electron transport in AlGaAs/GaAs/AlGaAs double-heterojunction structures

Tomizawa

Furuta

Yokoyama

et al. 1989

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Two-dimensionally quantized electron transport in modulation-doped double-heterojunction structures is precisely investigated using a Monte Carlo simulation in which the energy quantization in a well is considered. Enhanced low-field mobility in the quantum well is observed with increased carrier density. This results from the reduction of optical phonon scattering rates, which can be attributed to the spread of two-dimensional electron gas. It is also demonstrated that carrier transport related to this enhancement and carrier confinement effectively contribute to device operation in a double-heterojunction FET.

show abstract

GaAs/AlGaAs double heterostructure high electron mobility transistors

Cited by 14 publications

References 6 publications

Backgating characteristics of MODFET structures

Backgating characteristics of MODFET structures

Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates

Modeling for electron transport in AlGaAs/GaAs/AlGaAs double-heterojunction structures

Contact Info

Product

Resources

About