GaAs/AlGaAs superlattice quantum cascade lasers at λ≈13 μm

Strasser, G.; Gianordoli, S.; Hvozdara, L.; Schrenk, W.; Unterrainer, K.; Gornik, E.

doi:10.1063/1.124688

Cited by 66 publications

(18 citation statements)

References 18 publications

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“…In another work laser action on two different emission lines ( and m) was demonstrated [23] also based on a chirped superlattice active region. Intersubband lasers with superlattice active regions have also been demonstrated in the GaAs material system [24] and even achieved continuous wave operation at cryogenic temperatures [25].…”

Section: Historymentioning

confidence: 99%

Bound-to-continuum and two-phonon resonance, quantum-cascade lasers for high duty cycle, high-temperature operation

Faist

Hofstetter

Beck

et al. 2002

IEEE J. Quantum Electron.

221

110

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Section: Historymentioning

confidence: 99%

Bound-to-continuum and two-phonon resonance, quantum-cascade lasers for high duty cycle, high-temperature operation

Faist

Hofstetter

Beck

et al. 2002

IEEE J. Quantum Electron.

221

110

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“…The interface modes can be presented when q z ( ) is purely imaginary for both the well and barrier [12] , i.e., ,j ( )/ z,j ( )>0 for both GaN and AlGaN according to Eq. (2). The parameters adopted in our calculations are listed in Tab.1.…”

mentioning

confidence: 99%

“…The IF modes are presented in the longitudinal optical-phonon frequency for the Al 0.2 Ga 0.8 N/GaN and Al 0.15 Ga 0.85 N/ GaN QCLs, and two IF modes can be changed into other modes if their wave numbers are less than the special values. Owing to the more dispersive properties of IF phonons with the increasing Al composition, the scattering rates in both QCLs increase with the Al composition.The quantum cascade laser (QCL) is an important semiconductor laser source in basic reseach and potential applications [1][2][3] . Its structure is composed of many periods, in which a special type of semiconductor heterostructrue is grown with some alternating layers of different materials and various thicknesses.…”

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confidence: 99%

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Al composition dependency of interface phonon in the wurtzite quantum cascade laser

Chen

Fan

2010

Optoelectron. Lett.

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The interface (IF) phonons of the wurtzite quantum cascade lasers (QCL) are investigated using the transfer-matrix method (TMM). The IF modes are presented in the longitudinal optical-phonon frequency for the Al 0.2 Ga 0.8 N/GaN and Al 0.15 Ga 0.85 N/ GaN QCLs, and two IF modes can be changed into other modes if their wave numbers are less than the special values. Owing to the more dispersive properties of IF phonons with the increasing Al composition, the scattering rates in both QCLs increase with the Al composition.The quantum cascade laser (QCL) is an important semiconductor laser source in basic reseach and potential applications [1][2][3] . Its structure is composed of many periods, in which a special type of semiconductor heterostructrue is grown with some alternating layers of different materials and various thicknesses. Sun [4] and Huang [5] proposed to use a GaN-based system with large longitudinal-optical (LO)-phonon energy (~90 meV) for THz QCLs to achieve the high temperature operation. The GaN-based material usually crystallizes in the hexagonal wurtzite structure [6,7] . Every primitive cell in wurtzite contains four atoms, and nine optical and three acoustical branches are presented. Only two optical phonons are both Raman and infrared active, which correspond to the A 1 and E 1 modes [8] . The two modes both split into LO and transverse-optical (TO) components.Up to now, several theoretical investigations based on the dielectric continuum (DC) model and London's uniaxial model have been presented to the polar optical phonons in wurtzite GaN-based heterojunctions, for example, SQW, MQW, and superlattices (SL) [9][10][11][12][13][14][15] . Among them, Chen [11,15] utilized the macroscopic dielectric continuum (MDC) approach, and Lu [12,13] utilized the transfer-matrix method (TMM) to study the interface and confined phonons of GaN/ ZnO QW. TMM was also adopted by Gleize [9] to describe the interface and confined phonons of GaN QW and GaN/ AlN SL. In this paper, TMM is used to investigate the interface phonon spectra of the AlGaN/GaN QCL proposed by Sun [4] and Huang [5] . The active region of QCL is composed of many heterojun-ctions with arbitrary layer widths and numbers, which is suitable for TMM to treat with. The interface phonon spectra in Sun's and Huang's QCL are achieved by TMM, and the scattering rates in both QCLs induced by the IF phonon are also investigated.The wurtzite Al 0.15 Ga 0.85 N/GaN QCLs [4] proposed by Huang and Sun are considered here, and the width of each layer in one period is 3.0, 4.0, 3.0, 2.5, 2.0 and 2.5 nm, respectively, where the boldface numbers stand for the widths of wells. The width of each layer in both QCLs is the same, but Al composition of the barrier in Huang's QCL is 0.20, while that in Sun's QCL is 0.15. The electron energy levels and wavefunctions of the subband in one period are shown in Fig.1, which can be obtained by solving the effective mass Schrodinger and Poisson's equations self-consistently.The phonon mode in each layer can be regarded as the li...

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“…A frequently studied prototype is the sample in [4]. Different designs are interminiband-QCLs [5,6], as well as QCLs without injector regions [7] or containing only four barriers per period like the staircase-laser [8] and a recent THz-QCL [9].…”

Section: Introductionmentioning

confidence: 99%

Simulation of Transport and Gain in Quantum Cascade Lasers

Wacker

Lee

Pereira

2003

Advances in Solid State Physics

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Abstract. Quantum cascade lasers can be modeled within a hierarchy of different approaches: Standard rate equations for the electron densities in the levels, semiclassical Boltzmann equation for the microscopic distribution functions, and quantum kinetics including the coherent evolution between the states. Here we present a quantum transport approach based on nonequilibrium Green functions. This allows for quantitative simulations of the transport and optical gain of the device. The division of the current density in two terms shows that semiclassical transitions are likely to dominate the transport for the prototype device of Sirtori et al. but not for a recent THz-laser with only a few layers per period. The many particle effects are extremely dependent on the design of the heterostructure, and for the case considered here, inclusion of electron-electron interaction at the Hartree Fock level, provides a sizable change in absorption but imparts only a minor shift of the gain peak.

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GaAs/AlGaAs superlattice quantum cascade lasers at λ≈13 μm

Cited by 66 publications

References 18 publications

Bound-to-continuum and two-phonon resonance, quantum-cascade lasers for high duty cycle, high-temperature operation

Bound-to-continuum and two-phonon resonance, quantum-cascade lasers for high duty cycle, high-temperature operation

Al composition dependency of interface phonon in the wurtzite quantum cascade laser

Simulation of Transport and Gain in Quantum Cascade Lasers

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