GaAs/AlOx Nonlinear Waveguides for Infrared Tunable Generation

Guillotel, E.; Ravaro, M.; Savanier, Marc; Favero, Iván; Ducci, S.; Leo, Giuseppe

doi:10.5772/7144

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2013

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“…2 -10 m [25]. GaAs has some superior characteristics in this wavelength range and one can tap amplification also due to direct bandgap nature of this material [26].…”

Section: Introductionmentioning

confidence: 99%

FDTD Simulation of Three Photon Absorption and Realization of NAND Gate with GaAs Wire Waveguide

Dutta¹,

Chowdhury²,

Kumbhakar³

2013

OPJ

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GaAs has high three photon absorption (3PA) co-efficient at mid-infrared wavelength like2.2mm and waveguides can be formed with this material like silicon nano-wires. It is shown that three-photon-absorption in GaAs wire waveguide can be utilized to form NAND gate. Three-photon-absorption is incorporated in one-dimensional Finite Difference Time Domain (FDTD) equations. The evolution of a probe pulse under the influence of a pump pulse through crossabsorption in a waveguide is investigated using FDTD simulation, where the dominant process is nonlinear three-photon-absorption. Output probe power dependence on input pump power shows that GaAs waveguide NAND gate has higher extinction ratio in comparison to NAND gate using two-photon-absorption in silicon waveguide.

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“…2 -10 m [25]. GaAs has some superior characteristics in this wavelength range and one can tap amplification also due to direct bandgap nature of this material [26].…”

Section: Introductionmentioning

confidence: 99%