GaAs and GaAlAs Equi-Rate Etching Using a New Reactive Ion Beam Etching System

Asakawa, Kiyoshi; Sugata, Sumio

doi:10.1143/jjap.22.l653

Cited by 39 publications

(7 citation statements)

References 5 publications

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“…It is therefore important in plasma etching situations to consider vapor pressures. We also note that there have been reports of equirate etching of GaAs and A1GaAs in C12 RIE and reactive ion beam etching (RIBE) (26)(27)(28), so that under appropriate conditions, and particularly where atmospheric contamination is minimized, it is possible to etch Ga-and Al-containing compounds at the same rate. The case of InGaAs and AlInAs appears different, however, from that of GaAs and AIGaAs.…”

Section: Resultsmentioning

confidence: 96%

Cl2 and SiCl4 Reactive Ion Etching of In‐Based III–V Semiconductors

Pearton

Chakrabarti

Hobson

et al. 1990

J. Electrochem. Soc.

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The reactive ion etching of normalInAs , normalInSb , normalInP , normalInGaAs , and normalInAlAs in SiCl4/normalAr or Cl2/normalAr discharges was investigated as a function of the plasma parameters power density, pressure, and relative composition as well as etching time. The etch rates of all of these materials with the exception of normalInP are faster in SiCl4/normalAr in comparison to Cl2/normalAr , and show a similar dependence on power density and discharge composition. The variation of etch rates with pressure, however, are quite different for the two gas mixtures, with all of the materials going through a maximum at 60–80 mtorr for SiCl4/normalAr , while continuing to show a monotonic increase with pressure for Cl2/normalAr . The surface morphologies after RIE with either type of discharge are generally quite rough, although smooth etching can be obtained under appropriate conditions. Increased reverse bias currents are observed in Au/n‐type normalInP Schottky diodes after RIE, with higher currents for low pressure or high self‐bias etching. Photoluminescence decreases from normalInP are also observed after RIE, ranging in magnitude from 2–10 times. The depth of point defect introduction by energetic ion bombardment is limited to <200Å in normalInP for RIE at 50 mtorr and dc biases on the samples of 50V. Chlorine‐containing residues are present typically to a depth of ∼40Å on all of the material after RIE in either type of discharge. The addition of SF6 to both gas mixtures leads to a high selectivity for normalInP and normalInGaAs over normalInAlAs because of the formation of a thin involatile layer of AlF3 on the normalInAlAs .

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Section: Resultsmentioning

confidence: 96%

Cl2 and SiCl4 Reactive Ion Etching of In‐Based III–V Semiconductors

Pearton

Chakrabarti

Hobson

et al. 1990

J. Electrochem. Soc.

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“…In the particular case of laser diodes, a low series resistance is critical to the attainment of high-power CW operation (1). In the particular case of laser diodes, a low series resistance is critical to the attainment of high-power CW operation (1).…”

Section: Acknowledgmentsmentioning

confidence: 99%

Equal Rate and Anisotropic Reactive Ion Etching of GaAs / AlGaAs Heterostructures in SiCl4 Plasma

Salimian

Cooper

1989

J. Electrochem. Soc.

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Dry etching of GaAs and A1GaAs was investigated in a reactive ion etch system using SIC14 plasma. Experiments were performed over conditions of pressures in the range of 15-100 mtorr and dc bias in the range of -20 to -300V. Equal etch rates for GaAs and AI~Ga~,_~As were obtained under all conditions for values of x = 0-0.3, and higher etch rates of AI~Ga(1 x)As were observed for x > 0.3. Vertical and smooth etch profiles were obtained for pressures below 30 mtorr and dc bias values of over -100V.

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“…Fabrication of the TWPD proceeded as follows: The 3 pm wide waveguide rib was defined by conventional contact-print photolithography using a positive-working tri-level etch mask [20], [21]. The waveguides were etched using chlorine reactive-ion-beam etching [22] (RIBE) in a load-locked configuration for equal-rate etching of GaAs and AlGaAs with smooth, vertical, sidewalls [23]. The etch was extended to the interface between the lower AlGaAs cladding layer and the lower n+-doped GaAs conductive layer.…”

Section: Optical Designmentioning

confidence: 99%