GaAs as a material for particle detectors

Ayzenshtat, A.I.; Budnitsky, D.L.; Koretskaya, O. B.; Okaevich, L.S.; Новиков, В. А.; Потапов, А. И.; Толбанов, О. П.; Tyazhev, A.; Vorobiev, A.P.

doi:10.1016/s0168-9002(02)01455-9

Cited by 44 publications

(12 citation statements)

References 16 publications

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“…This doping is necessary to form a low-ohmic n-type semiconductor and to fill EL+ trapping centers with electrons. Then the material is compensated by a deep acceptor (Cr) by means of controlled diffusion at high temperature [9][10][11]. This results in a semi-insulating GaAs material with a resistivity of about 10 7 Ωm [10].…”

Section: The Gallium Arsenide Sensorsmentioning

confidence: 99%

“…Then the material is compensated by a deep acceptor (Cr) by means of controlled diffusion at high temperature [9][10][11]. This results in a semi-insulating GaAs material with a resistivity of about 10 7 Ωm [10]. The samples used here are subdivided into 4 production lots differing in type and concentration of the shallow donor.…”

Section: The Gallium Arsenide Sensorsmentioning

confidence: 99%

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Investigation of the radiation hardness of GaAs sensors in an electron beam

Afanaciev¹,

Bergholz²,

Bernitt³

et al. 2012

J. Inst.

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A compact and finely grained sandwich calorimeter is designed to instrument the very forward region of a detector at a future e + e − collider. The calorimeter will be exposed to low energy e + e − pairs originating from beamstrahlung, resulting in absorbed doses of about one MGy per year. GaAs pad sensors interleaved with tungsten absorber plates are considered as an option for this calorimeter. Several Cr-doped GaAs sensor prototypes were produced and irradiated with 8.5-10 MeV electrons up to a dose of 1.5 MGy. The sensor performance was measured as a function of the absorbed dose.

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Section: The Gallium Arsenide Sensorsmentioning

confidence: 99%

Section: The Gallium Arsenide Sensorsmentioning

confidence: 99%

Investigation of the radiation hardness of GaAs sensors in an electron beam

Afanaciev¹,

Bergholz²,

Bernitt³

et al. 2012

J. Inst.

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“…The technology of gallium arsenide compensation with chromium (HR GaAs:Cr) was originally developed in Tomsk State University over a decade ago [1][2][3]10] and since that time it was investigated with different ASICs [4][5][6][7]. This method allows increasing material resistivity up to 10 9 Ohm×cm both for 3-and 4-inch wafers.…”

Section: Introductionmentioning

confidence: 99%

Detailed analysis of quasi-ohmic contacts to high resistive GaAs:Cr structures

et al. 2019

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Proper choice of a contact material leads to the reduction of leakage current, an increase of X-ray penetration coefficient when so-called transparent contacts are used, and an increase of the Signal-to-Noise ratio. This work is dedicated to the investigation of quasi-ohmic contact behaviour in the "Me-GaAs:Cr-Me" system. AuGe contact was made by means of electron-beam deposition as a metallization layer (Me) to form the "Me-GaAs:Cr-Me" system. Chromium compensated GaAs samples of different thicknesses in the range of 250-1000 µm were tested. The investigation was carried out under various temperature conditions. The results of current-voltage dependence measurement give an overview of the current transport model in such structures and allow us to calculate the concentration of deep-level impurities.

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“…Previously it was shown [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17], that the X-ray sensors based on chromium compensated gallium arsenide (High Resistive -HR GaAs), can extend the range of registered photon energies up to 60 keV in comparison with silicon (Si) sensors, which can be used in registration of photons with energies only less than 20 keV. This opens up the possibility of using HR GaAs in such new applied researches as: -development of recording and measuring equipment for X-ray Free Electron Laser (XFEL); -studies in the life sciences; -studies of biological and nanostructured materials;systems for spectral computed tomography of biological and inorganic objects.…”

Section: Introductionmentioning

confidence: 99%

Characterization of 4 inch GaAs:Cr wafers

Budnitsky¹,

Novikov²,

Lozinskaya³

et al. 2017

J. Inst.

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Producing of large area matrix detectors based on semiconductor materials with high atomic number suitable for the registration of the synchrotron radiation of high intensity in the photon energy range 20-90 keV is a relevant technological challenge of our time. This will develop a fundamentally new experimental base of scientific research conducted at leading X-ray synchrotron centers with high luminosity beams. The paper analyzes the possibility of using 4 inch gallium arsenide wafers to create a high-resistive GaAs:Cr detector quality structures on their basis and detector arrays of large area.

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GaAs as a material for particle detectors

Cited by 44 publications

References 16 publications

Investigation of the radiation hardness of GaAs sensors in an electron beam

Investigation of the radiation hardness of GaAs sensors in an electron beam

Detailed analysis of quasi-ohmic contacts to high resistive GaAs:Cr structures

Characterization of 4 inch GaAs:Cr wafers

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