2005
DOI: 10.1063/1.2140614
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GaAs-based room-temperature continuous-wave 1.59μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Abstract: Starting from the growth of high-quality 1.3μmGaInNAs∕GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55μm by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5μm range GaInNAsSb∕GaNAs QWs are quite comparable to the 1.3μm QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59μm lasing of a GaInNAsSb∕GaNAs single-QW laser diode is obtained under continuous current… Show more

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Cited by 37 publications
(14 citation statements)
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“…Significant progress was made in this area, [4][5][6] leading to roomtemperature continuous-wave operation at 1.55 m and recently single mode GaInNAsSb/ GaNAs QW based distributed feedback lasers at the same wavelength were demonstrated. 7 In this paper, we analyze the dynamical properties of the gain and refractive index of GaInNAsSb/ GaNAs QW based semiconductor optical amplifiers ͑SOAs͒ using pump probe spectroscopy.…”
Section: Introductionmentioning
confidence: 99%
“…Significant progress was made in this area, [4][5][6] leading to roomtemperature continuous-wave operation at 1.55 m and recently single mode GaInNAsSb/ GaNAs QW based distributed feedback lasers at the same wavelength were demonstrated. 7 In this paper, we analyze the dynamical properties of the gain and refractive index of GaInNAsSb/ GaNAs QW based semiconductor optical amplifiers ͑SOAs͒ using pump probe spectroscopy.…”
Section: Introductionmentioning
confidence: 99%
“…A successful realization of ~1.5 µm lasers with the lowest threshold current has been achieved by using a GaInNAsSb/GaNAs quantum well (QW) as the active region [22]. More recently, room-temperature continuous wave operation at 1.55 µm [23,24] and 1.59 µm [25,26] has been demonstrated by using GaInNAsSb/GaNAs QW active regions on GaAs.…”
Section: Introductionmentioning
confidence: 99%
“…This material was used to demonstrate very promising edge-emitting lasers [5,6] and VCSELs [7] operating just below 1:5 mm. More recently, room-temperature continuous wave operation at 1:55 mm [8,9] and 1:59 mm [10] has been demonstrated using GaInNAsSb active regions on GaAs.…”
Section: Introductionmentioning
confidence: 99%