GaAs epitaxial growth on modified on-axis Si(001) substrates

Abstract

In this work, the effect of the dose of implantation of Ga atoms into the silicon surface on the epitaxial growth of GaAs was investigated. We demonstrate that the deposition of GaAs occurs mainly on modified areas. Separate crystallites of GaAs with an irregular shape are formed on modified areas at the lowest dose of Ga implantation equal to 1 pC/μm2, whereas an increase in the dose of Ga implantation leads to the coalescence of GaAs areas. At a maximum dose of 21 pC/μm2, degradation of the morphology and a decrease in the degree of filling of the area are observed, which is also confirmed by an increase in the roughness of the structure.

Study of GaAs epitaxial growth on Si substrates modified by focused ion beams

“…Each group of the samples was treated by FIB with a number of the passes: 5, 30 and 200. The natural oxide was removed from the Si surface by annealing at 900 • C in vacuum during 30 min [14]. Then the samples were annealed at T = 600 • C during 60 min in a no-arsenic medium or in the flux of As 4 of the pressure P = 4 • 10 −5 Pa. Then, the high-temperature (600 • C) GaAs layer of the thickness 200 nm was applied to the substrate surface at the rate of 0,25 of the monolayer per second by the molecular beam epitaxy method.…”

Investigation of the influence of the ion-beam treatment dose of the Si(111) surface on the GaAs nanowires growth processes

“…Under the FIB impact, the Ga ion dose varied from 0.052 to 10.4 pC/µm 2 and was specified by changing the number of passes of the ion beam as per the template-specified topology with invariability of the other FIB parameters. With the FIB treatment of the Si surface within the said dose range, the surface etching is almost suppressed (approximately several nanometers for the dose of 10.4 pC/µm 2 ) and there is predominantly evident implantation of the Ga ions to the subsurface layer of the substrate [28].…”

Исследование влияния дозы ионно-лучевой обработки поверхности Si(111) на процессы роста нитевидных нанокристаллов GaAs

“…Доза ионов Ga при воздействии ФИП варьировалась в пределах от 0.052 до 10.4 пКл/мкм 2 и задавалась путем изменения количества проходов ионного пучка по задаваемой шаблоном топологии при неизменности остальных параметров ФИП. При ФИП-обработке поверхности Si в указанном диапазоне доз травление поверхности практически подавлено (порядка нескольких нанометров для дозы 10.4 пКл/мкм 2 ) и наблюдается преимущественно имплантация ионов Ga в приповерхностный слой подложки [28].…”