GaAs HEMT as sensitive strain gauge

Liu, Jun; Hou, Tingting; Chen, Xue; Tan, Zhenxin; Li, Xinwei; Zhang, Binzhen; Zhang, Wendong

doi:10.1016/j.sse.2010.11.015

Cited by 5 publications

(2 citation statements)

References 8 publications

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“…Due to their high electron mobility, low power consumption and photoelectric characteristics, the resonant tunnel diode (RTD) and high electron mobility transistor (HEMT) are widely applied as electronic devices and photoelectric devices. From our previous study, the RTD and HEMT show a high piezoresistive coefficient [ 1 ]. They can be used as the sensitive elements of MEMS sensors, which can greatly improve their sensitivity of the MEMS sensors [ 2 ].…”

Section: Introductionmentioning

confidence: 99%

Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application

Shi

Guo²,

et al. 2012

Materials

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Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the optimization of the GaAs epitaxy layers on Si wafers. Matching superlattice and strain superlattice were used, and the surface defect density can be improved by two orders of magnitude. Combing with the Raman spectrum, the residual stress was characterized, and it can be concluded from the experimental results that the residual stress can be reduced by 50%, in comparison with the original substrate. This method gives us a solution to optimize the epitaxy GaAs layers on Si substrate, which will also optimize our future process of integration RTD and HEMT based on GaAs on Si substrate for the MEMS sensor applications.

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Section: Introductionmentioning

confidence: 99%

Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application

Shi

Guo²,

et al. 2012

Materials

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“…Compared to metal piezoresistors, they show higher gauge factors and the gauge factor depends on parameters such as temperature [17], crystallographic orientation [18] and carrier type and concentration [17]. Gauge factors as high as 175 were reported for p-type Si [19], ∼45 for polycrystalline Si under longitudinal strain [17], 26 350 for a GaAs HEMT [20], −29.4 for longitudinal and −20 for transverse gauge factors on n-type 6H-SiC [21]. Single crystal silicon nanowires have also been integrated with MEMS devices yielding a gauge factor of 67 though the individual placement process is complicated and tedious at present for the batch fabrication of large volume of sensors [22].…”

Section: Introductionmentioning

confidence: 99%

Micromachined force sensors using thin film nickel–chromium piezoresistors

Nadvi¹,

Butler²,

Çelik‐Butler³

et al. 2012

J. Micromech. Microeng.

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Micromachined force/tactile sensors using nickel-chromium piezoresistors have been investigated experimentally and through finite-element analysis. The force sensors were designed with a suspended aluminum oxide (Al 2 O 3 ) membrane and optimally placed piezoresistors to measure the strain in the membrane when deflected with an applied force. Different devices, each with varying size and shape of both the membrane and the piezoresistors, were designed, fabricated and characterized. The piezoresistors were placed into a half-Wheatstone bridge configuration with two active and two passive nickel-chromium resistors to provide temperature drift compensation. The force sensors were characterized using a load cell and a nanopositioner to measure the sensor response with applied load. Piezoresistive gauge factors in the range of 1-5.2 have been calculated for the thin film nichrome (NiCr 80/20 wt%) from the measured results. The force sensors were calculated to have a noise equivalent force of 65-245 nN.

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