GaAs Integrated Circuits

Chakrabarti, N.B.

doi:10.1080/03772063.1992.11437044

Cited by 4 publications

(2 citation statements)

References 11 publications

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“…Gallium arsenide (GaAs) is a semiconductor material widely used in electronic devices, which are in particularly high demand as electronic components for communication equipment [1][2][3] . As one of the largest production and processing companies of GaAs, the increasing utilization of GaAs in electronic devices has raised concerns regarding its potential risks to worker health in China.…”

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confidence: 99%

RNA Sequencing Analyses Reveal the Potential Mechanism of Pulmonary Injury Induced by Gallium Arsenide Particles in Human Bronchial Epithelioid Cells

Ouyang

Liu²,

et al. 2020

Sci Rep

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Extensive use of gallium arsenide (GaAs) has led to increased exposure to humans working in the semiconductor industry. this study employed physicochemical characterization of GaAs obtained from a workplace, cytotoxicity analysis of damage induced by GaAs in 16HBE cells, RNA-seq and related bioinformatic analysis, qRT-PCR verification and survival analysis to comprehensively understand the potential mechanism leading to lung toxicity induced by GaAs. We found that GaAs-induced abnormal gene expression was mainly related to the cellular response to chemical stimuli, the regulation of signalling, cell differentiation and the cell cycle, which are involved in transcriptional misregulation in cancer, the MAPK signalling pathway, the TGF-β signalling pathway and pulmonary disease-related pathways. Ten upregulated genes (FOS, JUN, HSP90AA1, CDKN1A, ESR1, MYC, RAC1, CTNNB1, MAPK8 and FOXO1) and 7 downregulated genes (TP53, AKT1, NFKB1, SMAD3, CDK1, E2F1 and PLK1) related to GaAs-induced pulmonary toxicity were identified. High expression of HSP90AA1, RAC1 and CDKN1A was significantly associated with a lower rate of overall survival in lung cancers. The results of this study indicate that GaAs-associated toxicities affected the misregulation of oncogenes and tumour suppressing genes, activation of the TGF-β/MAPK pathway, and regulation of cell differentiation and the cell cycle. These results help to elucidate the molecular mechanism underlying GaAs-induced pulmonary injury.

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confidence: 99%

RNA Sequencing Analyses Reveal the Potential Mechanism of Pulmonary Injury Induced by Gallium Arsenide Particles in Human Bronchial Epithelioid Cells

Ouyang

Liu²,

et al. 2020

Sci Rep

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“…These applications covers a vast area of electronics, optoelectronics and photonics such as direct satellite broadcasting, mobile communications, high speed data transfer and cable TV etc. It has certain advantages over other semiconductor materials owing to unique characteristics such as, better resistant to radiation, speedy operation in conjunction with small power use, and moreover potential to transfer electrical signals to optical signals (Chakrabarti 1992;Greber 2003). It is also considered one of the best photovoltaic materials for solar cell technology.…”

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confidence: 99%

DFT Investigations of the Optical Properties of Gallium Arsenide

Anua

Ahmed

Shaari

et al. 2014

AMR

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Gallium Arsenide (GaAs) because of having unique characteristics like direct band gap, higher electron mobility and saturated electron velocity etcetera, has wide applications specifically in optoelectronic devices. In this research work we present a comprehensive density functional theory (DFT) based first principles study of optical properties of GaAs. Exchange correlation functional (XC) play a key role in the DFT investigations. A comparative study of the optical properties is presented based upon local density approximation (LDA) by Perdew and wang, Perdew-Burke-Ernzerhof parameterized generalized gradient approximation (GGA-PBE), Wu-Cohen parameterized GGA (GGA-WC) and Engel and Vosko proposed GGA (GGA-EV). Computations in this study have been performed by full potential (FP) linearized augmented plane wave (LAPW) plus local orbitals (lo) approach designed within DFT as realized in the computational code WIEN2k. Our investigations, for the optical properties of GaAs with mentioned XC potentials, cover detailed analysis of dielectric functions, absorption coefficient α (ω), energy loss functions, reflectivity R(ω), refractive index n (ω) and extinction coefficient k (ω). The analysis shows that the optical parameters calculated with GGA-PBE are comparatively reasonable and closer to the experimental results. Keywords: Density functional theory, local density approximation, gradient and other corrections, APW calculations, Dielectric function, absorption and reflection spectra PACS: 71.15.Mb, 71.15.Ap, 77.22.Ch, 78.40.Pg

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Optical properties of GaAs

Akinlami¹,

Ashamu²

2013

J. Semicond.

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We have investigated the optical properties of gallium arsenide (GaAs) in the photon energy range 0.6-6.0 eV. We obtained a refractive index which has a maximum value of 5.0 at a photon energy of 3.1 eV; an extinction coefficient which has a maximum value of 4.2 at a photon energy of 5.0 eV; the dielectric constant, the real part of the complex dielectric constant has a maximum value of 24 at a photon energy of 2.8 eV and the imaginary part of the complex dielectric constant has a maximum value of 26.0 at a photon energy of 4.8 eV; the transmittance which has a maximum value of 0.22 at a photon energy of 4.0 eV; the absorption coefficient which has a maximum value of 0.22 10 8 m 1 at a photon energy of 4.8 eV, the reflectance which has a maximum value of 0.68 at 5.2eV; the reflection coefficient which has a maximum value of 0.82 at a photon energy of 5.2 eV; the real part of optical conductivity has a maximum value of 14.2 10 15 at 4.8 eV and the imaginary part of the optical conductivity has a maximum value of 6.8 10 15 at 5.0 eV. The values obtained for the optical properties of GaAs are in good agreement with other results.

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GaAs Integrated Circuits

Cited by 4 publications

References 11 publications

RNA Sequencing Analyses Reveal the Potential Mechanism of Pulmonary Injury Induced by Gallium Arsenide Particles in Human Bronchial Epithelioid Cells

RNA Sequencing Analyses Reveal the Potential Mechanism of Pulmonary Injury Induced by Gallium Arsenide Particles in Human Bronchial Epithelioid Cells

DFT Investigations of the Optical Properties of Gallium Arsenide

Optical properties of GaAs

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