GaAs Interfaces with Octadecyl Thiol Self-Assembled Monolayer: Structural and Electrical Properties

Nakagawa, O.S.; Ashok, S.; Sheen, Chin-Shown; Mårtensson, Jan; Allara, David L.

doi:10.1143/jjap.30.3759

Cited by 98 publications

(96 citation statements)

References 15 publications

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“…9 It is believed that the sulfur to GaAs bond provides passivation comparable to that observed in studies involving elemental sulfur, with additional stability provided both by the characteristics of the LTG:GaAs and the organic tail of the XYL molecule. [23][24][25] A patterned XYL layer has been used as an etch mask for wet chemical etching of the GaAs layers by covering these molecules in certain areas of the sample surface. 26…”

Section: Metal/molecule/semiconductor Nanostructuresmentioning

confidence: 99%

Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact applications

Janes

Lee

Liu

et al. 2000

Journal of Elec Materi

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We report a fabrication approach in which we combine self-assembled metal/ molecule nanostructures with chemically stable semiconductor surface layers. The resulting structures have well controlled dimensions and geometries (~ 4 nm Au nanoclusters) provided by the chemical self-assembly and have stable, low-resistance interfaces realized by the chemically stable semiconductor cap layer (low-temperature grown GaAs passivated by the organic tether molecules). Scanning tunneling microscope imaging and current-voltage spectroscopy of nanocontacts to n-GaAs fabricated using this approach indicate high quality, ohmic nanocontacts having a specific contact resistance of ~1 ¥ 10 -7 W · cm 2 and a maximum current density of ~1 ¥ 10 7 A/cm 2 , both comparable to those observed in large area contacts. Uniform 2-D arrays of these nanocontact structures have been fabricated and characterized as potential cells for nanoelectronic device applications.

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Section: Metal/molecule/semiconductor Nanostructuresmentioning

confidence: 99%

Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact applications

Janes

Lee

Liu

et al. 2000

Journal of Elec Materi

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“…Long-chain alkanethiol selfassembled monolayers ͑SAMs͒ on GaAs͑001͒ have been studied in this context by a number of authors, both from the perspective of fundamental material science [1][2][3][4][5][6][7][8][9][10] and as a potential route to applications including surface passivation, 11 metal-molecule-semiconductor junctions, 12,13 the assembly of DNA hybridization probes, 14 and the immobilization of functional proteins such as avidin. 15 In these studies, Fourier transform infrared ͑FTIR͒ spectroscopy is frequently employed to investigate important SAM structural parameters such as molecular orientation 16 and the fraction of conformational defects.…”

Section: Introductionmentioning

confidence: 99%

Observation of surface enhanced IR absorption coefficient in alkanethiol based self-assembled monolayers on GaAs(001)

Marshall

Bensebaa

Dubowski

2009

Journal of Applied Physics

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Alkanethiol self-assembled monolayers (SAMs) of various methylene group chain lengths [HS–(CH2)n–CH3] (n=9,11,13,15,17) were fabricated on the GaAs(001) surface followed by characterization using Fourier transform infrared spectroscopy. Modal analysis of the CH2 stretching mode region (2800–3000 cm−1) showed that linear scaling of the n-dependent factors accurately reproduced the spectral data, supporting a chain-length consistent physical model upon which a measurement of the absorption coefficient was based. Evaluated from the linearity of the absorbance data, a peak coefficient of 3.5×104 cm−1 was obtained and a domain for ordered self-assembly was assigned for values n>9. Compared with measurements of the absorption coefficient made in the liquid phase, the SAM phase coefficient was determined to be about six times greater. This enhancement effect is discussed in terms of contributions relating to the locally ordered environment and is largely attributed to the chemical properties of the interface. We believe this to be the first demonstration of IR spectral enhancement of a molecular species chemisorbed on the semiconductor surface.

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“…These findings are promising for, e.g., the implementation of GaAs technology in future cell±semiconductor hybrids. on GaAs, [14] e.g., octadecylthiol (ODT) adsorption layers were employed as resist masks on GaAs for lithographic purposes. [15] Also, as on gold, alkane thiols were used to introduce surface functionalities present at the x-end of the mercaptoalkyl chain, [12,16] such as the carboxy group in 16-mercaptohexadecanoic acid (MHDA).…”

Section: Introductionmentioning

confidence: 99%

Corrosion Protection and Long-Term Chemical Functionalization of Gallium Arsenide in an Aqueous Environment

et al. 2002

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The chemical instability of the gallium arsenide surface poses a serious limitation to its use under ambient conditions, such as in air or aqueous solution. It is shown that both bare GaAs and GaAs coated with self‐assembled monolayers of organic alkanethiols are continuously etched in aqueous environments, which limits their use as biosensor devices in physiological environments. A corrosion protection material having long‐term stability (“chemical passivation”) and biocompatibility (“biological passivation”) with the GaAs surface was found to be interfacial layers of polymerized organic mercaptosilanes a few tens of nanometers thick. The mercaptosilanes not only provided a nearly perfect corrosion protection of GaAs in water, but they also have the potential to introduce chemical groups that allow easy, further surface functionalization. Characterization of the interfacial polymer layer and its protective role was done by atomic force microscopy (AFM), ellipsometry, contact angle measurements, and atomic absorption spectroscopy (AAS). The interfacial polymer layers fully suppressed the release of arsenic into the electrolyte buffer and also provided an adhesion‐promoting interface, which allowed the cultivation of electrically excitable cells, normal rat kidney (NRK) fibroblasts, on GaAs. The electrical performance of GaAs and GaAs/InGaAs heterostructures in water was monitored via cyclic voltammetry and the IU characteristics of field‐effect channels. GaAs was significantly stabilized by the insulating polymeric surface coatings, even under moderate electrochemical loads. These findings are promising for, e.g., the implementation of GaAs technology in future cell–semiconductor hybrids.

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GaAs Interfaces with Octadecyl Thiol Self-Assembled Monolayer: Structural and Electrical Properties

Cited by 98 publications

References 15 publications

Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact applications

Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact applications

Observation of surface enhanced IR absorption coefficient in alkanethiol based self-assembled monolayers on GaAs(001)

Corrosion Protection and Long-Term Chemical Functionalization of Gallium Arsenide in an Aqueous Environment

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