GaAs nanowires grown on Al-doped ZnO buffer layer

Abstract

We report a pathway to grow GaAs nanowires on a variety of substrates using a combination of atomic layer deposition and metallo-organic vapor phase epitaxy (MOVPE). GaAs nanowires were grown via MOVPE at 430-540 C on an atomic-layer-deposited Al:ZnO buffer layer. The resulting nanowires were affected only by the properties of the buffer layer, allowing nanowire growth on a number of substrates that withstand $400 C. The growth occurred in two phases: initial in-plane growth and subsequent out-plane growth. The nanowires grown exhibited a strong photoluminescence signal both at room temperature and at 12 K. The 12 K photoluminescence peak was at 1.47 eV, which was attributed to Zn autodoping from the buffer layer. The crystal structure was zincblende plagued with either twin planes or diagonal defect planes, which were related to perturbations in the seed particle during the growth. The used method combines substrates with variable properties to nanowire growth on a transparent and conductive Al:ZnO buffer layer. V C 2013 AIP Publishing LLC.

InSb Nanowire Direct Growth on Plastic for Monolithic Flexible Device Fabrication

“…The observed PL peak of ∼155 meV is slightly red-shifted by ∼15 meV from the ZB InSb band gap value. On the other hand, red-shifting of PL signal in nanowires is a common phenomenon with various origins: (i) band bending related to surface states or interfaces; (ii) crystal structure variation, type II transitions, and defects; , and (iii) dopants and impurities. , Here, red-shifting due to surface and interface states is considered the most plausible explanation since the InSb network on the PI surface is of polycrystalline nature and is expected to contain grain boundaries, and additionally, the InSb NW structure has a high surface-to-volume ratio. Similarly, impurities may be present in the NWs in quantities below the EDX detection limit and induce red-shifting of the PL peak position.…”

Topical review: pathways toward cost-effective single-junction III–V solar cells

“…Meanwhile, MOCVD growth of GaAs NWs on ITO-coated glass substrate was demonstrated by Wu et al, by using the Aucatalysed VLS method [195]. Haggren et al then demonstrated GaAs NW growth on Al-doped ZnO (AZO) (see figure 12(d)), which is a low-cost TCO alternative to ITO, also with an Aucatalysed VLS method by MOCVD [196,197]. As shown in figure 12(c), they proposed a growth model which explains the NW bending and the influence of Zn diffusion from the AZO layer into the Au seed on the growth mechanism.…”

“…NW growth on plastic substrates was made possible by optimisation of a low-temperature growth process [202]. Diodic behaviour was demonstrated in a simple p-n junction fabricated with the asgrown n-type InAs NW network and a p-type sputtered NiO x Reprinted from [196], with the permission of AIP Publishing. layer, which opens up opportunities for the development of low-cost flexible III-V solar cells in the future.…”

Compound semiconductor nanowires based organicinorganic hybrid solar cell

“…Kinetics analysis is also reported to have a fundamental understanding of the growth rate and crystal quality as a function of those parameters [116,120,128]. Besides, there are reports focusing on the direct growth of III-V NWs on low cost substrates such as glass [131] and transparent conductive oxide [125,127,132] for photovoltaics fabrication [133].…”

“…In 2008, there was the first report of InP NWs directly growth on ITO glass. GaAs NWs were also grown on aluminium-doped zinc oxide substrate [132]. However, most of the as-grown III-V NWs in the publications have noticeable kinks and worm-shape defects which seriously degrade the crystal quality of the NWs.…”