GaAs PHEMT with 1.6 W/mm output power density

Marsetz, W.; Hulsmann, A.; Köhler, K.; Demmler, M.; Schlechtweg, M.

doi:10.1049/el:19990474

Cited by 14 publications

(2 citation statements)

References 3 publications

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“…GaAs-based compound semiconductors have been extensively used to fabricate highpower and high-frequency devices, such as field-effect transistors (FETs), high electron mobility transistors (HEMTs), heterojunction bipolar transistors (HBTs), and laser diodes [1][2][3][4]. Such devices will produce a large amount of heat by self-heating that needs to be spread out through GaAs substrate, especially for the HEMTs and laser diodes.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications

Liang

Nakamura

Zhan

et al. 2021

Diamond and Related Materials

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Section: Introductionmentioning

confidence: 99%

Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications

Liang

Nakamura

Zhan

et al. 2021

Diamond and Related Materials

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“…The coplanar amplifier MMICs were fabricated using our 0.3-pm gate-, double recess-, double-side-doped PHEMT process on 4" wafers [9]. Process features are a gate-drain breakdown voltage > 13 V, a peak transconductance G,,=350 mS/mm at Vd=7 V, and a maximum drain current 14-=650 mA/mm.…”

Section: Coplanar Amplifier Mmic Designmentioning

confidence: 99%

A 4-Watt X-band compact coplanar high power amplifier MMIC with 18-dB gain and 25-% PAE

Bessemoulin

Quay²,

Ramberger³

et al. 2002

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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The performance of a compact coplanar (CPW) microwave monolithic integrated circuit (MMIC) amplifier with high output power in the X-band is presented. Based on our 0.3-pm gate length GaAs power PHEMT process on 4" wafer, this two-stage amplifier, having a chip size of 16mm2, averages 4 Watts CW and 2 5 % PAE in the Xband, with more than 18-dE4 linear gain. Peak output powers of P-ldB=36.3 dBm (4.3 Watts) and P, of 36.9 dBm (4.9 Watt) at 10GHz with a power added efficiency of 35 % were also measured. Compared to previously reported X-band coplanar HPA, this represents a chip size reduction of 20 %, comparable to the size of compact state-of-the-art microstrip PAS.

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GaAs Microwave SSPA’s: Design and characteristics

Hek¹,

Vliet²

2003

Analog Circuit Design

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GaAs PHEMT with 1.6 W/mm output power density

Cited by 14 publications

References 3 publications

Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications

Fabrication of high-quality GaAs/diamond heterointerface for thermal management applications

A 4-Watt X-band compact coplanar high power amplifier MMIC with 18-dB gain and 25-% PAE

GaAs Microwave SSPA’s: Design and characteristics

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