GaAs Single Electron Transistors Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy and Their Application to Single Electron Logic Circuits

Abstract

GaAs single electron transistors (SETs) are successfully fabricated using selectively grown GaAs/AlGaAs modulation doped structures by metalorganic vapor phase epitaxy (MOVPE) on (001) GaAs masked substrates. SET shows clear Coulomb oscillations and Coulomb gaps modulated by gate voltage. GaAs single electron tunneling inverter circuits having a SET and a variable load resistance are also formed. The operation of a resistance-load inverter circuit is confirmed at 1.9 K from the transport properties of this SET and input-output characteristics.

GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots

“…The resistive load single electron logic inverters were successfully designed and fabricated by simple arrangement of WPGs and GaAs nanowires, as shown in Fig.4 Previous III-V semiconductor SET logic inverters showed gains of about 1/1000 11) . The resistive load inverter with a 2-gate WPG SET as a driver SET was also fabricated and its transfer gain was 0.21.…”

Selectively formed GaAs quantum nanostructures and their application to single electron integrated circuits

“…This is because SETs can control the number of electrons in a nanoscale island via Coulomb blockade (CB) effects [1][2][3][4][5][6]. For a single electron logic system, a new architecture, that is, a binary decision diagram (BDD)-based architecture has been used instead of a conventional architecture for current LSIs because of the practical problems with SETs.…”

Low temperature transport in dual-gated SETs fabricated by selective area metalorganic vapor phase epitaxy

“…We have reported on the fabrication of single electron devices by using selective area metalorganic vapor phase epitaxy (SA-MOVPE) on partially masked substrates [4][5][6]. In particular, we have recently proposed and demonstrated [7] a structure having much stronger lateral confinement as compared to the conventional structures by utilizing the structure grown on zig-zag-shaped mask patterns.…”

“…However, Coulomb oscillations were observed only near the pinch-off region of the single electron transistor (SET). This is because the gate wrapped around both the QD and adjacent regions, and the gate changes both QD potential and the height of tunneling barriers, and it is a major drawback of such epitaxially grown structures with simple gate geometry [4][5][6][7][8]. In this study, we propose and fabricate a device which has two gates, namely, a side gate and a top gate, to overcome such shortcomings.…”