GaAs tunnel junction grown by metalorganic vapor-phase epitaxy for multigap cascade solar cells

Basmaji, P.; Guittard, M.; Rudra, A.; Carlin, J.‐F.; Gibart, P.

doi:10.1063/1.339528

Cited by 40 publications

(8 citation statements)

References 10 publications

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“…The simulations were performed under AM1.5G one sun illumination. The temperature dependence of the material parameters for GaInP and GaAs were taken into consideration before the simulations were performed [13,14]. The objective was to identify the dependence of the performance of the tandem cell for each of the electrical parameters already described.…”

Section: Effect Of Temperaturementioning

confidence: 99%

Studies on the Performance of a GaInP/GaAs Tandem Solar Cell at Elevated Temperatures

Pal¹,

Adhikary²

2019

IJEM

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In this paper theoretical studies have been performed on a multijunction GaInP/GaAs based tandem solar cell. The top GaInP cell and the bottom GaAs cell were investigated separately. At an operating temperature of 300K, the current matching condition is fulfilled when the top cell and bottom cell base doping concentration and thickness are set to 5x10 15 /cm 3 , 1µm, and 2x10 17 /cm 3 , 0.127µm respectively. For the purpose of the investigation, a wide operating temperature range was chosen from 25º C to 100º C. The optimized tandem solar cell structure having a thickness of 1.847 microns is found to have V OC =2.2996V, I SC =0.0136Amp/cm 2 , FF=87.61% and ɳ=27.4% under AM1.5G one sun illumination. Studies have also revealed that when the cells are analyzed separately the current mismatch is less significant at low temperatures with the difference becoming notable at higher temperatures. Simulations of the solar cell were performed using PC1D.

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Section: Effect Of Temperaturementioning

confidence: 99%

Studies on the Performance of a GaInP/GaAs Tandem Solar Cell at Elevated Temperatures

Pal¹,

Adhikary²

2019

IJEM

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“…Oxygen consumption was measured via closed-system respirometry (Vleck 1987) and used to calculate MR (Peterson 1990). Oxygen consumption rates of each tortoise were measured three times at all five T inc (28.5, 29.5, 30.5, 31.5, and 32.5 8C): 1-3 d after internalizing yolk and on days 40 and 100 posthatching.…”

Section: Metabolic Ratementioning

confidence: 99%

Incubation temperature effects on hatchling growth and metabolic rate in the African spurred tortoise,Geochelone sulcata

2009

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We tested competing hypotheses regarding the persistence of temperature-dependent sex determination (TSD) in the African spurred tortoise (Geochelone sulcata (Miller, 1779)), by measuring the effects of incubation temperature (Tinc) on a suite of physiological and behavioral endpoints, including resting metabolic rate, yolk-to-tissue conversion efficiency, posthatching growth, and temperature preference. Correlations of these variables with Tinc could lend support to the hypothesis that TSD persists owing to sex-specific benefits of development at specific temperatures, whereas absence of Tinc effects support the null hypothesis that TSD persists simply because selection favoring alternate sex determining mechanisms is weak or absent. The metabolic rate Q10 value exhibited temporal variation and was higher immediately after hatching compared with 40 or 100 days posthatching, and mass conversion efficiency varied among clutches. Incubation temperature correlated inversely with duration of embryonic development, but did not influence yolk conversion efficiency, growth, or resting metabolic rate. Thus, our results provide little evidence indicating contemporary benefits of TSD, suggesting that TSD in G. sulcata is no longer evolutionarily adaptive but persists because selection against it and in favor of other sex-determining mechanisms is weak, or that TSD is an adaptive trait but for reasons not elucidated by this study.Résumé : Nous avons évalué des hypothèses de rechange concernant la persistance de la détermination du sexe sous l'influence de la température (TSD) chez la tortue sillonnée africaine (Geochelone sulcata (Miller, 1779)) en mesurant les effets de la température d'incubation (T inc ) sur une série de conséquences physiologiques et comportementales, dont le taux de métabolisme de repos, l'efficacité de la transformation du vitellus en tissu, la croissance après l'éclosion et la préfér-ence de température. Les corrélations entre ces variables et la T inc pourraient venir appuyer l'hypothèse selon laquelle la TSD persiste à cause d'avantages reliés au sexe d'un développement à des températures spécifiques, alors que l'absence d'effets de la T inc appuierait l'hypothèse nulle qui veut que la TSD persiste simplement parce que la sélection qui pourrait favoriser des mécanismes de rechange de la détermination du sexe est faible ou absente. Le Q 10 du taux métabolique pré-sente une variation temporelle et est plus élevé immédiatement après l'éclosion que 40 ou 100 jours plus tard et l'efficacité de la conversion de la masse varie d'un groupe d'oeufs à un autre. Il existe une corrélation inverse entre la température d'incubation et la durée du développement embryonnaire, mais la température influence ni l'efficacité de la conversion du vitellus, ni la croissance, ni le taux de métabolisme de repos. Ainsi, nos résultats apportent peu d'appui à l'existence d'un bénéfice actuel de la TSD, ce qui laisse croire que la TSD chez G. sulcata n'est plus adaptative dans l'évolution, mais qu'elle persiste parce que la sé...

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“…High-quality tunnel junctions are widely used in many applications such as tandem solar cells [1][2][3][4][5][6][7][8], multijunction photodetectors [1], non-alloyed Ohmic contacts [9], and GaAs integrated circuits [10]. For this several applications, very stable and high doping levels are required on both sides of the junction.…”

Section: Introductionmentioning

confidence: 99%

“…Previous attempts to fabricate high quality GaAs tunnel diodes used Zn as p-type dopant with Si, Sn or Te as n-type dopants [3,22,23]. This gave tunnel diodes with peak current density up to 200 A cm --2 and very high excess current density for Zn/Te doped diodes.…”

Section: Introductionmentioning

confidence: 99%

High Quality p+-n+-GaAs Tunnel Junction Diode Grown by Atmospheric Pressure Metalorganic Vapour Phase Epitaxy

Béji

Jani

Gibart

2001

phys. stat. sol. (a)

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We report the growth of a p + -n + -GaAs tunnel diode by atmospheric pressure metalorganic vapour phase epitaxy (MOVPE), using carbon (C) and silicon (Si) as p-type and n-type dopants, respectively. The more efficient incorporation of silicon on donor sites and carbon on acceptor sites, results in a tunnel junction with peak current density up to 50 Acm --2 , and peak-to-valley current ratio up to 20 at room temperature. This represents the best result ever reported for a GaAs tunnel diode by MOVPE. The calculated theoretical peak current density agrees substantially with our experimental and reported results.

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GaAs tunnel junction grown by metalorganic vapor-phase epitaxy for multigap cascade solar cells

Cited by 40 publications

References 10 publications

Studies on the Performance of a GaInP/GaAs Tandem Solar Cell at Elevated Temperatures

Studies on the Performance of a GaInP/GaAs Tandem Solar Cell at Elevated Temperatures

Incubation temperature effects on hatchling growth and metabolic rate in the African spurred tortoise,Geochelone sulcata

High Quality p+-n+-GaAs Tunnel Junction Diode Grown by Atmospheric Pressure Metalorganic Vapour Phase Epitaxy

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