1999
DOI: 10.1109/68.769701
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GaAs VCSEL's at /spl lambda/=780 and 835 nm for short-distance 2.5-Gb/s plastic optical fiber data links

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Cited by 20 publications
(12 citation statements)
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“…Despite these promises, the development of a VCSEL which operates in a single fundamental mode during modulation has been limited due to device parasitics such as large intrinsic resistance and capacitance [1][2][3][4][5][6][7]. The 3 dB small signal modulation bandwidth for multimode VCSELs has been reported as high as 14.5 GHz for a proton-implanted VCSEL [2,3] and 17 GHz for an oxide-confined VCSEL [4].…”
mentioning
confidence: 99%
“…Despite these promises, the development of a VCSEL which operates in a single fundamental mode during modulation has been limited due to device parasitics such as large intrinsic resistance and capacitance [1][2][3][4][5][6][7]. The 3 dB small signal modulation bandwidth for multimode VCSELs has been reported as high as 14.5 GHz for a proton-implanted VCSEL [2,3] and 17 GHz for an oxide-confined VCSEL [4].…”
mentioning
confidence: 99%
“…As seen from Fig. 4a, the spectral density (δS 2 1 ) Ω of the Stokes parameter S 1 has a peak at a characteristic frequency Ω 1 , while two other spectra (δS 2 2 ) Ω and (δS 2 3 ) Ω for the Stokes parameters S 2 and S 3 exhibit peaks at another (higher) characteristic frequency Ω 2 . These peaks are well-known from the theory of solid-state and semiconductor lasers and have their physical origin in the relaxation oscillations due to a periodic energy exchange between the active medium and the laser radiation.…”
Section: Polarization States Of Light In Vcselsmentioning
confidence: 88%
“…This interest is motivated in the first line by the potential applications of this type of lasers in the high-rate optical communications [2]. But there is also more fundamental reason for understanding of the polarization behavior in VCSELs, namely, a possibility of generating the intensity-squeezed light using the sub-Poissonian pumping of the active medium [3,4].…”
Section: Introductionmentioning
confidence: 99%
“…The high values of and together with the large transverse spot size, is beneficial for hightemperature/high-output power edge-emitter operation. The reduced carrier leakage (high and ) is also beneficial for realizing high-temperature and high-power VCSEL operation [11].…”
Section: Edge-emitting Device Structuresmentioning
confidence: 99%