With remarkable improvement in power conversion efficiency (PCE), perovskite solar cells (PSCs) have garnered a lot of interest in the photovoltaic industry. Among them, the all-inorganic CsPbBr3 perovskite has been widely used in solar cells because of its exceptional stability and potential commercial applications. In addition, the advantages of low-temperature preparation that minimizes energy loss and favorable energy level arrangement with a wide band gap have made SnO2 potentially displace TiO2 as the most common electron transport layer (ETL) material. However, the performance of SnO2based PSCs was restricted by the defects and under-coordinated tin ions in SnO2 films. In this study, we prepared a highquality SCN-doped tin oxide (SnO2) electron transport layer, obtaining ITO/SCN-SnO2/CsPbBr3/Carbon structural solar cell. The open circuit voltage, fill factor, short circuit current density, and PCE of the best device was 1.37 V, 68.68%, 7.02 mA/cm2, and 6.61%, respectively, higher than the pristine devices. The results indicated that SCN doping could achieve higher-quality SnO2 electron transport layers, thereby improving the performance of inorganic CsPbBr3 perovskite solar cells.