Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range

Schlichenmaier, C.; Thränhardt, A.; Meier, Torsten; Koch, S. W.; Chow, Weng W.; Hader, J.; Moloney, Jerome V.

doi:10.1063/1.2149371

Cited by 14 publications

(10 citation statements)

References 20 publications

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“…Although the auger recombination is considered to be negligible in wide band gap material, some reports show that for some devices it is known to be of greater importance due to spontaneous emission [25]. So, Auger recombination is also included in this device simulation.…”

Section: Device Structure and Simulation Settingsmentioning

confidence: 99%

Optimal design of the multiple-apertures-GaN-based vertical HEMTs with $$\hbox {SiO}_{2}$$ SiO 2 current blocking layer

Shrestha

Chang

2015

J Comput Electron

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Gallium nitride (GaN) based vertical high electron mobility transistor (HEMT) is very crucial for high power applications. Combination of advantageous material properties of GaN for high speed applications and novel vertical structure makes this device very beneficial for high power application. To improve the device performance especially in high drain bias condition, a novel GaN based vertical HEMT with silicon dioxide (SiO 2 ) current blocking layer (CBL) was reported recently. In this paper, effects of the thickness of CBL layer and the aperture length on the electrical and breakdown characteristics of GaN vertical HEMTs with SiO 2 CBL are simulated by using two-dimensional quantum-mechanically corrected device simulation. Intensive numerical study on the device enables us to optimize and conclude that devices with 0.5-µm-thick SiO 2 layer and 1-µm-long aperture will be beneficial considerations to improve the device performance. Notably, using the multiple apertures can effectively reduce the on-state conducting resistance of the device. On increasing the number of apertures, the drain current is increased but the breakdown voltage is decreased. Therefore, device with four apertures is taken as an optimized result. The maximum drain current of 84 mA B Yiming Li at V G = 1 V and V D = 30 V, and the breakdown voltage of 480 V have been achieved for the optimized device.

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Section: Device Structure and Simulation Settingsmentioning

confidence: 99%

Optimal design of the multiple-apertures-GaN-based vertical HEMTs with $$\hbox {SiO}_{2}$$ SiO 2 current blocking layer

Shrestha

Chang

2015

J Comput Electron

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“…The Silvaco Atlas 2‐D drift‐diffusion simulator was used to model the device response. The traps were modeled by using the Shockley–Read–Hall recombination . Polarization models were taken into account due to the strong spontaneous and piezoelectric polarization effects of nitride semiconductors .…”

Section: Optimizing the Device Structurementioning

confidence: 99%

“…The traps were modeled by using the Shockley-Read-Hall recombination. [25] Polarization models were taken into account due to the strong spontaneous and piezoelectric polarization effects of nitride semiconductors. [26] A low field mobility model and a nitride-specific high field dependent mobility model were used considering various types of scattering mechanisms.…”

Section: Optimizing the Device Structurementioning

confidence: 99%

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p‐GaN Gate AlGaN/GaN HEMTs

Cai

Zhang³

et al. 2017

Physica Status Solidi (a)

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This research investigates the impacts of the AlGaN barrier layer thickness and the Al mole fraction on p‐GaN gate AlGaN/GaN HEMTs and presents an optimized structure. Based on 2‐D drift‐diffusion simulation, the effects of the trap level in the UID GaN buffer layer on the transfer and output characteristics of the optimized device are described. The energies of the trap levels are set at 0.28, 0.33, 0.4, 0.58, and 0.9 eV below the conduction band minimum, respectively. The depth of the trap level is found to influence the off‐state leakage current and on‐state ID,max. The Shockley–Read–Hall recombination model for a single trap level is used to analyze the impact of different trap levels in the UID GaN buffer on p‐GaN gate AlGaN/GaN HEMTs.

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“…Our microscopic model allows us to consider the gain and loss properties of (GaIn)(NAs) in the entire 1.3–1.55 µm range independent of any growth issues 56, addressing the question whether the degrading of optical properties at higher wavelengths is an intrinsic‐ or a material‐quality‐related phenomenon. Figure 14 shows the intensity gain at 1.3 µm (solid lines) and 1.55 µm (dotted lines) in a quantum‐well structure containing 40% indium.…”

Section: (Gain)(nas)‐based Materials Systemmentioning

confidence: 99%

Quantum modeling of semiconductor gain materials and vertical‐external‐cavity surface‐emitting laser systems

Bückers

Kühn

Schlichenmaier

et al. 2010

Physica Status Solidi (b)

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This version is available at https://strathprints.strath.ac.uk/35896/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the Strathprints administrator: strathprints@strath.ac.ukThe Strathprints institutional repository (https://strathprints.strath.ac.uk) is a digital archive of University of Strathclyde research outputs. It has been developed to disseminate open access research outputs, expose data about those outputs, and enable the management and persistent access to Strathclyde's intellectual output. This article gives an overview of the microscopic theory used to quantitatively model a wide range of semiconductor laser gain materials. As a snapshot of the current state of research, applications to a variety of actual quantum-well systems are presented. Detailed theoryexperiment comparisons are shown and it is analysed how the theory can be used to extract poorly known material parameters. The intrinsic laser loss processes due to radiative and non-radiative Auger recombination are evaluated microscopically.The results are used for realistic simulations of verticalexternal-cavity surface-emitting laser systems. To account for nonequilibrium effects, a simplified model is presented using pre-computed microscopic scattering and dephasing rates. Prominent deviations from quasi-equilibrium carrier distributions are obtained under strong in-well pumping conditions.

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Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range

Cited by 14 publications

References 20 publications

Optimal design of the multiple-apertures-GaN-based vertical HEMTs with $$\hbox {SiO}_{2}$$ SiO 2 current blocking layer

Optimal design of the multiple-apertures-GaN-based vertical HEMTs with $$\hbox {SiO}_{2}$$ SiO 2 current blocking layer

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p‐GaN Gate AlGaN/GaN HEMTs

Quantum modeling of semiconductor gain materials and vertical‐external‐cavity surface‐emitting laser systems

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