Gain and saturation in semiconductor lasers

Huang, Jian; Casperson, Lee W.

doi:10.1007/bf00420579

Cited by 83 publications

(37 citation statements)

References 148 publications

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“…These effects have been extensively studied in the literature (see, for example, (Huang and Casperson 1993)) and for simplicity they are not considered in the present paper.…”

Section: Model 4 (Transitions With No K-selection Rule With Contributmentioning

confidence: 98%

Nonlinear dynamics of a directly modulated semiconductor laser with cavity detuning

2005

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A detailed numerical study of dynamical behavior of a semiconductor laser under current modulation and cavity detuning has been performed on the base of four different models of the active medium which take into account direct transitions between ground subbands, transitions with no k-selection rule between ground subbands and contribution of excited subbands in each of the abovementioned cases. We have shown that different nonlinear regimes (period doubling, chaos, generalized bistability) can be obtained either with cavity detuning from the gain band maximum or near the laser threshold. It has been established that the shape and principal peculiarities of amplitude detuning characteristics are determined by the relation between the current modulation frequency and maximum resonance frequency of the laser.

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“…These effects have been extensively studied in the literature (see, for example, (Huang and Casperson 1993)) and for simplicity they are not considered in the present paper.…”

Section: Model 4 (Transitions With No K-selection Rule With Contributmentioning

confidence: 98%

Nonlinear dynamics of a directly modulated semiconductor laser with cavity detuning

2005

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“…Both of these models complement previous well-established models determined from even more ad hoc arguments [4], [6] and include expressions for the various lumped parameters in terms of physical quantities. Both the partially and fully lumped models in the literature [4], [6] contain the contribution of spontaneous emission to the lasing mode and the addition of terms accounting for spontaneously emitted photons is outlined in the current context in Appendix A. For the fourth model it is necessary to average the effect of the mirrors over the whole device in order to close the system of equations.…”

Section: Discussionmentioning

confidence: 69%

“…The resulting model comprises three ordinary differential equations and four first-order wave equations, this being outlined in Appendix B. Previous attempts to model spatial-hole burning have taken the form of gain saturation (see, for example, [6] and references therein), which is a far less systematic approach.…”

Section: Partially Lumpedmentioning

confidence: 99%

“…The model in the lasing region has now been simplified such that Nt and st are solutions to two ordinary differential equations (66)-(67) which complement the well-established single-mode rate equations [6]. As in the partially lumped case, the contribution of the spontaneous emission to the lasing mode is omitted from (67); terms which take the spontaneously emitted photons into account are outlined in Appendix A.…”

Section: T At =-I (Itr)-i-(itr) -I-(otr)-i (Otr) +K Fr£g(n )-mentioning

confidence: 99%

“…However, some partially lumped models for the active region have also been reported which comprise one ordinary differential equation and two first-order wave equations [4], [5]. A fully lumped model in terms of two ordinary differential equations (for electron and photon concentrations) is very well-established (see, for example, [6], [7]). In this paper, we attempt to address deficiencies in the modelling of the fully space-dependent case.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Mathematical Modelling of Electrical-Optical Effects in Semiconductor Laser Operation

Smith

King²,

Tuck³

2001

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Saturation and losses in an optical semiconductor quantum well amplifier

Butty

Bongiovanni

Staehli

1995

Physica Status Solidi (b)

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The results obtained from luminescence measurements made on one-dimensional optical amplifiers are reviewed. The investigated samples are GaAs/(Ga, AI)As waveguiding structures containing a multiple quantum well structure as active element. The experimental data are compared with the results of a numerical self-consistent model of the optical amplifier. The observed spatial dependencies of carrier and luminous densities are found to agree in a semi-quantitative way with the theoretical predictions. Saturation of optical amplification is caused by carrier depopulation through stimulated recombination, and by the loss of light caused by scattering at sample defects and/or imperfect waveguiding. It is argued that the discrepancies found on the high-energy side of the grain spectra are caused by reabsorption of amplified light at the edges of the amplifier.

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Gain and saturation in semiconductor lasers

Cited by 83 publications

References 148 publications

Nonlinear dynamics of a directly modulated semiconductor laser with cavity detuning

Nonlinear dynamics of a directly modulated semiconductor laser with cavity detuning

Mathematical Modelling of Electrical-Optical Effects in Semiconductor Laser Operation

Saturation and losses in an optical semiconductor quantum well amplifier

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