Gain-coupled 770 nm DFB semiconductor laser based on surface grating

Ruan, Chunkao; Chen, Yongyi; Gao, Feng; Qin, Li; Ma, Dezheng; Jia, Ping; Chen, Chao; Wu, Hao; Liu, Xia; Zeng, Yugang; Zhang, Xing; Song, Yubin; Wang, Lijun

doi:10.1016/j.optcom.2020.126377

Cited by 7 publications

(3 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Semiconductor lasers are used in a wide range of applications, such as sensors [1], space laser communications [2], precision measurements [3], pumped solid-state lasers [4], and fiber lasers [5]. There are many types of grating semiconductor lasers, including first-order distributed feedback (DFB) lasers [6,7], first-order distributed Bragg reflector (DBR) lasers [8,9], surface-emitting DFB semiconductor lasers [10,11], surface high-order grating lasers [12,13], and so on. DFB lasers, * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Sensing strategy based on random slot semiconductor laser

Jia¹,

Wang²,

Liu³

et al. 2023

Laser Phys.

View full text Add to dashboard Cite

A photonic sensor based on a random slot surface-emitting semiconductor laser is theoretically demonstrated by utilizing multi-order diffraction. The results show that the variation of far-field local speckles at single wavelength lasing can be utilized to confirm the refractive index of the substances and the flow velocity of erythrocytes in capillaries. The similarity of the intensity contrast is the other protocol to measure the flow velocity of erythrocytes. Additionally, the similarity of the spectral contrast at multiple wavelengths lasing can be used to determine the concentration of erythrocytes in capillaries. The random slot semiconductor laser may provide a new and flexible platform for versatile active sensing.

show abstract

Section: Introductionmentioning

confidence: 99%

Sensing strategy based on random slot semiconductor laser

Jia¹,

Wang²,

Liu³

et al. 2023

Laser Phys.

View full text Add to dashboard Cite

show abstract

“…Evanescently coupled DBR laser arrays in 760-770 nm was fabricated by Reinhold et al, in CW mode operation, an output power of 700 mW was achieved with a spectral bandwidth of 0.2 nm [28]. Recently, gain-coupled DFB diode laser based on surface gratings at 770 nm was implemented with a CW output power of 117 mW [29]. Here, we demonstrate a micro-integrated high-power narrow-linewidth external-cavity tapered diode laser (ECDL) at 762 nm in both CW and pulsed mode operation.…”

Section: Introductionmentioning

confidence: 99%

Micro-integrated high-power narrow-linewidth external-cavity tapered diode laser at 762 nm for daylight imaging

Chi

Müller

Hansen

et al. 2022

Optics Communications

View full text Add to dashboard Cite

“…Research in optical pumping of semiconductor VCSELs and disk lasers have made considerable progress, and very high output powers have been reported [2][3][4][5][6]. Several schemes have also been reported on optical pumping of edge-emitting semiconductor lasers [7][8][9][10][11]. Almost all the schemes employ optical pumping by irradiation through the sides or from the top of the active region along its length.…”

Section: Introductionmentioning

confidence: 99%

Optically-Pumped Coupled Ridge Waveguide Semiconductor Laser

VOGIRALA¹

2022

Preprint

View full text Add to dashboard Cite

<p>In this paper, we propose an integrated design of an in-plane optically-pumped edge-emitting ridge-waveguide semiconductor laser, wherein the pump radiation is transferred to the active region of the laser through evanescent wave coupling from an adjacent coupled ridge waveguide. The proposed design of the laser is based on In1-xGaxAsyP1-y/InP heterostructure, with a pump at 1310 nm wavelength and lasing around 1550 nm. In order to simulate the steady-state characteristics of the optically-pumped semiconductor laser, we suitably modify the well-established Connelly’s model for semiconductor optical amplifiers (SOAs). The validity of the model for semiconductor lasers is established by showing that the evolution of simulated longitudinal modes and the output characteristics conform with the laser theory. For the chosen device parameters, under optimum operating conditions, the threshold pump power is found to be ≈ 70 mW with a high pump power conversion efficiency (i.e. output laser power/input pump power) of 61%. The proposed all-optically pumped semiconductor laser could be in the form of a 2-port fiber pig-tailed stand-alone device, without the need for any bias current. </p>

show abstract

Gain-coupled 770 nm DFB semiconductor laser based on surface grating

Cited by 7 publications

References 23 publications

Sensing strategy based on random slot semiconductor laser

Sensing strategy based on random slot semiconductor laser

Micro-integrated high-power narrow-linewidth external-cavity tapered diode laser at 762 nm for daylight imaging

Optically-Pumped Coupled Ridge Waveguide Semiconductor Laser

Contact Info

Product

Resources

About