GaInAsP/InP DH lasers with a chemically etched facet

Iga, Kenichi; Pollack, M. A.; Miller, B. I.; Martin, R. Douglas

doi:10.1109/jqe.1980.1070360

Cited by 14 publications

(7 citation statements)

References 12 publications

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“…Such a result indicates that the chemicals unfortun-CHEMICAL ETCHING OF I n G a A s P / I n P 1059 ately may not be used to fabricate the etched-mirror lasers in the InGaAsP/InP system. There have recently been reported InGaAsP/inP lasers with chemically etched mirrors by using the HCI: CH~COOH: H20~ (27)(28)(29) Fig. 4(C).…”

Section: Proposed Device Applicationmentioning

confidence: 99%

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Chemical Etching of InGaAsP / InP DH Wafer

Adachi

Noguchi

Kawaguchi

1982

J. Electrochem. Soc.

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The chemical etching characteristics of InGaAsP/InP double heterostructure (DH) wafers are studied through an SiO~ mask in the solutions of various etchant systems: (i) HC1, (ii) HCl:HNO3, (iii) HBr, (iv) Br2:CH3OH, and (v) H~SO4.The etching profiles produced in the (001) surface planes are examined by cleaving the DH wafer in orthogonal directions along the (110) and (110) planes. The profiles obtained depend on the type of etchant, its component proportion, and etching conditions. Various etching profiles, such as ordinary mesa shaped, reverse mesa shaped, and vertical walls, are formed by stripes being etched in the (001) planes of the DH wafer. The utility of these etching solutions is also discussed for a variety of InGaAsP/InP device applications.

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Section: Proposed Device Applicationmentioning

confidence: 99%

“…The etching solutions studied in the present work can now be used for selective removal of the specific layer composed of the DH wafer and for characterManuscript submitted Aug. 14, 1981; revised manuscript received Oct. 28,1981.…”

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confidence: 99%

Chemical Etching of InGaAsP / InP DH Wafer

Adachi

Noguchi

Kawaguchi

1982

J. Electrochem. Soc.

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“…The interest in developing the technology of fabricating laser diode Fabry–Perot resonators by dry or wet etching is almost as old as the modern semiconductor laser diodes themselves [ 1 , 2 , 3 , 4 ]. Although the laser bars’ cleavage technology provides parallel and smooth mirrors [ 5 , 6 ], it is at the same time expensive, difficult to perform, and non-compatible with on-wafer testing procedures.…”

Section: Introductionmentioning

confidence: 99%

InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications

et al. 2023

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The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry and wet etching process: inductively coupled plasma—reactive ion etching in chlorine, followed by wet etching in tetramethylammonium hydroxide (TMAH). For the dry etching stage, an optimized procedure was used. For the wet etching step, the TMAH temperature was set to a constant value of 80 °C, and the only variable parameter was time. The time was divided into individual steps, each of 20 min. To validate the results, electro-optical parameters were measured after each step and compared with a cleaved reference, as well as with scanning electron microscope imaging of the front surface. It was determined that the optimal wet etching time was 40 min. For this time, the laser tested achieved a fully comparable threshold current (within 10%) with the cleaved reference. The described technology is an important step for the future manufacturing of photonic integrated circuits with laser diodes integrated on a chip and for ultra-short-cavity lasers.

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“…technique[25][26][27][28][29][30][31][32][33][34][35][36]. It also includes fast atom beam etching[37], which utilizes neutral particles, thus protecting samples from surge during etching.…”

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confidence: 99%

<title>Optical heads based on coupled-cavity laser diode</title>

Katagiri

Ukita

1995

SPIE Proceedings

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Optical heads wherein a laser diode (LD)is optically coupled through a small aperture to a recording medium acting as an external mirror are described. A flying head and a fiber-coupled head are presented, and their high-sensitivity, wavelength-free detection characteristics are demonstrated. A micro-lens head is also investigated. Interference undulations of the coupled-cavity laser with various spatial frequencies due to variation in the external-cavity length are completely explained. Anti-reflection (AR) coatings on the LD facet with reflectivities of better than -40 dB greatly suppress these undulations. To achieve practical heads, fundamental fabrication techniques including AR coating and monolithic integration on laser wafers are briefly mentioned.

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GaInAsP/InP DH lasers with a chemically etched facet

Cited by 14 publications

References 12 publications

Chemical Etching of InGaAsP / InP DH Wafer

Chemical Etching of InGaAsP / InP DH Wafer

InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications

<title>Optical heads based on coupled-cavity laser diode</title>

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