GaInN‐based tunnel junctions with high InN mole fractions grown by MOVPE

Minamikawa, Daichi; Ino, Masataka; Kawai, Shunsuke; Takeuchi, Tetsuya; Kamiyama, Satoshi; Iwaya, Motoaki; Akasaki, Isamu

doi:10.1002/pssb.201451507

Cited by 29 publications

(17 citation statements)

References 22 publications

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“…One solution to this problem is forming a tunnel junction (TJ) for the anode contact of a deep-UV LED, because an n-type electrode with a low contact resistance is available. Table 1 lists previously reported LEDs having TJ-based anode contacts [20][21][22][23][24][25][26][27][28][29][30][31]. Some issues are faced in realizing a TJ-LED with a high-Al composition.…”

Section: Of 12mentioning

confidence: 99%

“…Dehydrogenation from the p-type GaN layer buried under the n-type GaN has been reported to be difficult [35]. To avoid this problem, TJ layers were grown in the hydrogen-free ambient by methods such as plasma-enhanced molecular beam epitaxy (PAMBE) [20,22,[26][27][28][29][30] as it results in a lower differential specific resistivity (Rs) compared with that in the case of conventional MOVPE growth [21,[23][24][25]31]. Recently, Akasaka et al demonstrated the low resistivity of the n + -type GaN/p + -type GaN TJ using MOVPE growth by optimizing the doping profile and growth condition [25]; this should contribute toward the manufacture of GaN-based TJ contacts.…”

Section: Of 12mentioning

confidence: 99%

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Improvement of Algan Homoepitaxial Tunnel Junction Deep-UV Light-Emitting Diodes by Controlling the Growth of N-Type Algan and Polycrystalline Mgzno/Al Electrodes

Nagata¹,

Matsubara²,

Saito³

et al. 2023

Preprint

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Deep-ultraviolet (UV) light-emitting diodes (LEDs) based on AlGaN crystals have low light-emission efficiency; therefore, there is a need to improve this light-emission efficiency for a wide range of applications such as water and air sterilizations. UV-light-transparent device structures are considered one of the many solutions toward increasing light output power. To this end, the present study focused on developing a transparent AlGaN-based tunnel junction (TJ) as the anode of a deep-UV LED. Deep-UV LEDs composed of n+/p+-type AlGaN TJs were fabricated under the growth condition that reduced the carrier compensation in the n+-type AlGaN layers. The operating voltage was 10.8 V under the direct current (DC) operation of 63 A/cm2. In addition, magnesium zinc oxide (MgZnO)/Al reflective electrodes were fabricated to enhance the output power of the AlGaN homoepitaxial TJ LED. The output power was 57.3 mW under a DC operation of 63 A/cm2, and it was 1.7 times higher than that realized using the conventional Ti/Al electrodes. The combination of the AlGaN-based TJ and MgZnO/Al reflective contact allows further improvement of the light output power. This study confirms that the AlGaN TJ is a promising UV-transmittance structure that can obtain a high light-extraction efficiency.

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Section: Of 12mentioning

confidence: 99%

Section: Of 12mentioning

confidence: 99%

Improvement of Algan Homoepitaxial Tunnel Junction Deep-UV Light-Emitting Diodes by Controlling the Growth of N-Type Algan and Polycrystalline Mgzno/Al Electrodes

Nagata¹,

Matsubara²,

Saito³

et al. 2023

Preprint

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“…These cap layers are either p-type GaN layers [29] or n-type combined with tunnel junctions (TJs). [30][31][32][33][34][35] Thicker GaN cap layers are required for embedding an NW-MQS with a height of %1 μm. Therefore, p-GaN layers with high electrical resistance and high light absorption are not ideal cap layers.…”

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confidence: 99%

Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions

Okuno

Mizutani

Iida

et al. 2022

Physica Status Solidi (b)

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Herein, the growth mechanism and defect structure of GaN‐based nanowire multiple‐quantum‐shells (NW‐MQSs) with cap layers combining tunnel junctions and n‐GaN are investigated in detail. In the NW‐MQS structure, defect structures are formed in three regions: (i) From the c‐plane active layer at the tip of NW because of the low crystal quality of the active layer. (ii) Basal‐plane stacking faults (BSFs) with partial dislocations (PDs) are generated from the m‐planes of the NW‐MQSs; these defects are triggered by the silicon nitride (SiNx) formed on the NW surface. While some defects terminate because of the half loop formed by the PDs along the lateral growth of cap layers, others terminate at the coalesced region of the cap layers grown from adjacent MQSs. (iii) Line defects due to low‐angle grain boundaries and planar defects due to the BSFs in region (ii) are formed in the region wherein cap layers coalesce. The defects reaching the surface of the cap layers predominantly depend on the number of defects generated from the c‐plane active layers in region (i). The growth mode and propagation mechanism of such defects are associated, and a method for realizing optical devices based on the high‐quality NW‐MQS structures is discussed.

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“…[21][22][23] Although a significant reduction in TJ voltage loss can be achieved in MOCVD grown TJs by taking advantage of high In mole fraction heterostructures, there is concern about optical absoprtion in the TJ layers when utilizing such TJ design in a cascaded LED structure. 24) It has been shown that some reduction in forward voltage can be achieved in MOCVD-grown TJs using growth interruptions that enable sharper doping profiles. 25,26) Through improvements in doping scheme and graded heterostructure design, visibletransparent MOCVD TJs with ultra-low voltage TJs (0.17 V at 100 A cm −2 ) were recently reported.…”

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confidence: 99%

Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs

Jamal-Eddine

Armstrong

Rajan

2021

Appl. Phys. Express

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Ultra-low voltage drop tunnel junctions (TJs) were utilized to enable multi-active region blue light emitting diodes (LEDs) with up to three active regions in a single device. The multi-active region blue LEDs were grown monolithically by metal-organic chemical vapor deposition (MOCVD) without growth interruption. This is the first demonstration of a MOCVD grown triple-junction LED. Optimized TJ design enabled near-ideal voltage and EQE scaling close to the number of junctions. This work demonstrates that with proper TJ design, improvements in wall-plug efficiency at high output power operation are possible by cascading multiple III-nitride based LEDs.

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GaInN‐based tunnel junctions with high InN mole fractions grown by MOVPE

Cited by 29 publications

References 22 publications

Improvement of Algan Homoepitaxial Tunnel Junction Deep-UV Light-Emitting Diodes by Controlling the Growth of N-Type Algan and Polycrystalline Mgzno/Al Electrodes

Improvement of Algan Homoepitaxial Tunnel Junction Deep-UV Light-Emitting Diodes by Controlling the Growth of N-Type Algan and Polycrystalline Mgzno/Al Electrodes

Growth Defects in InGaN‐Based Multiple‐Quantum‐Shell Nanowires with Si‐Doped GaN Cap Layers and Tunnel Junctions

Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs

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