GaInN/GaN - Ni/Au transparent conducting oxide Schottky barrier solar cells

Kevin, Chern,; Guido, L. J.; Ciarkowski, Timothy; Allen, Noah; Laboutin, Oleg; Welser, Roger E.; Elarde, V.C.

doi:10.1109/pvsc.2014.6925117

Cited by 3 publications

(2 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Previously, the use of Schottky barrier (SB) contacts which is one possible type of ED was demonstrated to realize SB GaInN/GaN solar cell devices without any p-doped region [49], [50]. GaN based n-channel SB-MOSFET has also been reported before [51].…”

Section: Role Of Electrostatic Doping (Ed)mentioning

confidence: 99%

See 1 more Smart Citation

Towards electrostatic doping approaches in ultra-thin body semiconductor materials and devices

Gupta¹

View full text Add to dashboard Cite

show abstract

Section: Role Of Electrostatic Doping (Ed)mentioning

confidence: 99%

“…Other than in conventional Si-based material, the SB based solar cell has also been demonstrated in CNTs [91], cadmium sulphide (CdS) [92] and molybdenum disulfide (MoS 2 ) [93]. In addition, an SB based solar cell has been demonstrated in the GaInN/GaN material system without any p-type doped region [49], [50].…”

Section: 4(b)mentioning

confidence: 99%