GaInN laser diodes from 440 to 530nm: a performance study on single-mode and multi-mode R&amp;D designs

Strauß, Uwe; Somers, A.; Heine, Urs; Wurm, Teresa; Peter, M.; Eichler, Christoph; Gerhard, Sven; Bruederl, Georg; Tautz, Soenke; Stojetz, Bernhard; Loeffler, Andreas; Koenig, Harald

doi:10.1117/12.2254504

Cited by 27 publications

(7 citation statements)

References 11 publications

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“…Figure (a) shows the outer appearance of the front facet of a diode laser after sudden degradation. It looks similar to what we and other authors have published before. There are, however, two distinctions.…”

Section: Resultssupporting

confidence: 92%

“…(b). This particular type of cracking has not been observed for COD during long‐term aging . Therefore, we think, that the cracks along the metallization of the emitter stripe are a result of the acceleration of the COD process by the single‐pulse step test applied here.…”

Section: Resultsmentioning

confidence: 66%

“…The catastrophic optical damage (COD) is a generic degradation effect related to high power densities . It is well studied for GaAs‐based diode lasers , and has been observed for GaN‐based devices as well . It becomes particularly important when the power levels will further advance.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of GaN based high‐power diode lasers after singular degradation events

Mura

Vanzi

Hempel

et al. 2017

Physica Rapid Research Ltrs

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Damage patterns caused by the Catastrophic Optical Damage (COD) are analyzed in GaN‐based high‐power diode lasers. In contrast to standard failure analysis, the devices are intentionally degraded under well‐defined conditions. We find that defect growth during COD is fed by the optical mode, that is, laser energy. This process involves melting and even vaporization of quantum‐well and waveguide materials. Average defect propagation velocities along the laser axis of 110 m s−1 are observed. COD results in material loss including the formation of an empty channel. This is well consistent with material loss due to ejections of hot material out of the front facet of the device. The laser structure in the immediate vicinity of the empty channel seems to be absolutely undisturbed and no transition regions or remaining material are observed. These results are compared with earlier findings from comparable experiments obtained with GaAs‐based devices.

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Section: Resultssupporting

confidence: 92%

Section: Resultsmentioning

confidence: 66%

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Analysis of GaN based high‐power diode lasers after singular degradation events

Mura

Vanzi

Hempel

et al. 2017

Physica Rapid Research Ltrs

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show abstract

“…GaN-based semiconductor lasers are widely used in high-density data storage [1] , laser additive manufacturing [2] and laser display [3] . However, the reliability of GaN-based semiconductor lasers needs to be evaluated through degradation characteristics research before batch productin.…”

Section: Introductionmentioning

confidence: 99%

Research on Degradation Characteristics of GaN-based LD

Zhang

Liao

Wang

et al. 2022

J. Phys.: Conf. Ser.

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In recent years, GaN-based semiconductor laser diode(LD) have become an ideal light source for laser display, because of their high power and unique luminous wavelength. However, there is a challenge about reliability of GaN-based LD in industrial application. In this paper, an accelerated aging test is conducted on the same group of GaN-based LD at a high current of 4.1A. The degradation rate of GaN-based LD is obtained by least square method. Besides, the optical characteristics and low frequency electrical noise of LD are analysed after degradation. The results show that the lasing wavelength and low frequency electrical noise of GaN-based LD will increase after degradation. This helps to provide experimental reference for degradtion research of GaN-based LD.

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“…The InGaN-based laser diodes (LDs) have been studied for many years and remarkable progress has been made so far due to their broad applications in optoelectronics as light sources, including mobile laser projection, laser TV, full color display, high-density data storage, biological agent detection systems and medical applications. [1][2][3][4][5][6] In particular, InGaN-based violet LDs promise to be the next generation of laser sources for high density optical disc systems, such as blue-ray disc (BD), high definition-DVD (HD-DVD), and other applications. [7][8][9] However, the electricalto-optical power conversion efficiency of the commercialized InGaN-based LDs is still less than 40%.…”

Section: Introductionmentioning

confidence: 99%

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide

et al. 2017

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The upper waveguide (UWG) has direct influences on the optical and electrical characteristics of the violet laser diode (LD) by changing the optical field distribution or barrier of the electron blocking layer (EBL). In this study, a series of InGaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power (OLP) under an injecting current of 120 mA or the threshold current (I th ) is deteriorated when the UWG is u-In 0.02 Ga 0.98 N/GaN or u-In 0.02 Ga 0.98 N/Al x Ga 1−x N (0 ≤ x ≤ 0.1), which should be attributed to small optical confinement factor (OCF) or severe electron leakage. Therefore, a new violet LD structure with u-In 0.02 Ga 0.98 N /GaN/Al 0.05 Ga 0.95 N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally, the output light power under an injecting current of 120 mA is improved to 176.4 mW.

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GaInN laser diodes from 440 to 530nm: a performance study on single-mode and multi-mode R&D designs

Cited by 27 publications

References 11 publications

Analysis of GaN based high‐power diode lasers after singular degradation events

Analysis of GaN based high‐power diode lasers after singular degradation events

Research on Degradation Characteristics of GaN-based LD

Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide

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