GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applications

Calvez, S.; Hopkins, James F.; Smith, Scott A.; Clark, A.H.; Macaluso, Roberto; Sun, Handong; Dawson, Martin D.; Jouhti, T.; Pessa, M.; Gündoğdu, Kenan; Hall, K. C.; Boggess, Thomas F.

doi:10.1016/j.jcrysgro.2004.04.072

Cited by 25 publications

(9 citation statements)

References 34 publications

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“…The dilute nitride GaInNAs alloy may be a superior material as an alternative to the InP-based RCEPD due to its lattice matching to GaAs, thus the availability of the high reflectivity GaAs/GaAlAs Bragg reflectors [7,8,9]. A small amount (a few %) of N incorporation into GaInAs causes a large red-shift in the band gap and the red shift increases with increasing nitrogen content [10].…”

Section: Introductionmentioning

confidence: 99%

Dilute nitride resonant cavity enhanced photodetector with internal gain for the λ ∼ 1.3 μm optical communications window

Balkan

Erol

Sarcan

et al. 2015

Superlattices and Microstructures

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Section: Introductionmentioning

confidence: 99%

Dilute nitride resonant cavity enhanced photodetector with internal gain for the λ ∼ 1.3 μm optical communications window

Balkan

Erol

Sarcan

et al. 2015

Superlattices and Microstructures

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“…Dilute nitrides has provided opportunities for a variety of optoelectronics device applications. Devices already demonstrated include diode lasers (Mitomo et al 2005), photodetectors (Heroux et al 1999), solar cells (Geisz and Friedman 2002), vertical cavity surface emitting laser (Calvez et al 2004a), vertical external-cavity surface emitting lasers (Calvez et al 2004b), semiconductor optical amplifiers (Calvez et al 2003) modulators (Balcioglu Aahrenkiel and Friedman 2000) and heterojuction bipolar transistors (HBTs) (Li et al 2000). A wide range of novel devices could still benefit from dilute nitrides; commercially, the most important devices are for inexpensive optical fiber data transmission at 1,300 nm for metro-area links over 10 to 20 km.…”

Section: Introductionmentioning

confidence: 99%

Optical and electrical properties of modulation-doped n and p-type Ga x In1-x N y As1-y /GaAs quantum wells for 1.3 μm laser applications

et al. 2007

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We present a comprehensive study of spectral photoluminescence (PL), photoconductivity and Hall mobility in undoped, n and p-type modulation-doped quantum wells of Ga 1−x In x N y As 1−y /GaAs with varying nitrogen concentration. We show that the increasing nitrogen composition red shifts the energy gap and this red shift is accompanied with a reduction of the 2D electron mobility in the quantum wells. True temperature dependence of the band gap, free from errors associated with nitrogen induced exciton trapping effects, is observed because in the modulation doped QW samples PL emission is dominated by bandto-band recombination and the S-shape temperature dependence is eliminated. Excellent fit to semi-experimental Varshni equation is obtained and the temperature dependence of the band gap in the linear regime (dE/dT) is tabulated as a function of nitrogen concentration and the type of dopant.

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“…Mode-locked fibre lasers are convenient and powerful sources of ultrashort pulses 4 , and the inclusion of a broadband saturable absorber as a passive optical switch inside the laser cavity may offer tuneability over a range of wavelengths 5 . Semiconductor saturable absorber mirrors are widely used in fibre lasers [4][5][6] , but their operating range is typically limited to a few tens of nanometres 7,8 , and their fabrication can be challenging in the 1.3 -1.5 mm wavelength region used for optical communications 9,10 . Single-walled carbon nanotubes are excellent saturable absorbers because of their subpicosecond recovery time, low saturation intensity, polarization insensitivity, and mechanical and environmental robustness [11][12][13][14][15][16] .…”

mentioning

confidence: 99%

Wideband-tuneable, nanotube mode-locked, fibre laser

et al. 2008

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Ultrashort-pulse lasers with spectral tuning capability have widespread applications in fields such as spectroscopy, biomedical research and telecommunications [1][2][3] . Mode-locked fibre lasers are convenient and powerful sources of ultrashort pulses 4 , and the inclusion of a broadband saturable absorber as a passive optical switch inside the laser cavity may offer tuneability over a range of wavelengths 5 . Semiconductor saturable absorber mirrors are widely used in fibre lasers [4][5][6] , but their operating range is typically limited to a few tens of nanometres 7,8 , and their fabrication can be challenging in the 1.3 -1.5 mm wavelength region used for optical communications 9,10 . Single-walled carbon nanotubes are excellent saturable absorbers because of their subpicosecond recovery time, low saturation intensity, polarization insensitivity, and mechanical and environmental robustness [11][12][13][14][15][16] . Here, we engineer a nanotube -polycarbonate film with a wide bandwidth (>300 nm) around 1.55 mm, and then use it to demonstrate a 2.4 ps Er 31 -doped fibre laser that is tuneable from 1,518 to 1,558 nm. In principle, different diameters and chiralities of nanotubes could be combined to enable compact, mode-locked fibre lasers that are tuneable over a much broader range of wavelengths than other systems.The development of compact, diode-pumped, ultrafast fibre lasers as alternatives for bulk solid-state lasers is fast progressing. To date, short pulse generation has been particularly effective using passive mode-locking techniques 4 . At present, the dominant technology in passively mode-locked fibre lasers is based on semiconductor saturable absorber mirrors (SESAMs) 6 . Conventional SESAMs use III -V semiconductor multiple quantum wells grown on distributed Bragg reflectors (DBRs) 3 . Their fabrication involves molecular beam epitaxy (MBE) 6 . To reduce the relaxation time to sub-picosecond levels, either postgrowth ion-implantation or low-temperature growth is normally required 6,17 . Furthermore, SESAMs are based on a resonant nonlinearity, which tends to limit wavelength tuneability 18,19 for the shortest pulse lasers 20 . Their operating bandwidth is further limited by the bottom DBR section, which has a finite bandwidth for high reflectivity 19 . For example, the bandwidth of conventional Al x Ga 12x As/AlAs SESAMs is limited to about 60 nm by the bottom Bragg mirrors 21 . Wider bandwidth, &200 nm, was achieved using novel material pairs with larger refractive index difference (for example, AlGaAs/CaF 2 ) 21 , or by replacing the DBRs with metallic mirrors 22 . However, so far, no widely tuneable mode-locked laser has been reported using these novel structures. Trade-offs between design parameters have to be made in order to obtain targeted device characteristics 10 . A tuning range over 100 nm was achieved by SESAMs in solidstate and fibre lasers 18,23 . The widest was 125 nm, for a Yb-doped fibre laser operating at 1 mm. However, two SESAMs with complementary spectral properties had to b...

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GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3μm device applications

Cited by 25 publications

References 34 publications

Dilute nitride resonant cavity enhanced photodetector with internal gain for the λ ∼ 1.3 μm optical communications window

Dilute nitride resonant cavity enhanced photodetector with internal gain for the λ ∼ 1.3 μm optical communications window

Optical and electrical properties of modulation-doped n and p-type Ga x In1-x N y As1-y /GaAs quantum wells for 1.3 μm laser applications

Wideband-tuneable, nanotube mode-locked, fibre laser

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