Gallium-arsenide deep-level tunnel diode with record negative conductance and record peak current density

Gallium-arsenide deep-level materials for THz and fiber-optic applications

“…The n-contacts were found to be weak Schottky diodes, which required 0.6 V to reach mA currents. Surprisingly, our devices showed tunnel-diode behavior with the largest [4] ever peak-current density of 16 kA=cm 2 and the largest ever negative-conductance (NC) per-area of 1=226 O mm 2 at room temperature for a GaAs tunnel diode. See Fig.…”

“…Third, we demonstrate the first tunnel-diodes explicitly designed with deep levels in low-temperature-grown (LTG) GaAs. At room temperature, our measured negative-conductance-per-area of 1=226 O mm 2 and peak current density of 16 kA=cm 2 are the largest [4] ever in GaAs tunnel diodes. Our devices also show room temperature peak-to-valley current ratios as high as 22.…”

Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky Barriers

“…It can also be employed for compensating the loss from the inductor-capacitor tank during resonance 25 . NG effect is believed to originate from the existence of large density of deep states within a narrow energy range above the valence band 26 . It could also originate from the avalanche effect which we observed in this work.…”

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

“…Later, tunnel junctions have been fabricated using Si [2,3], Si/SiGe [4,5], GaAs [6][7][8][9][10][11][12][13][14][15], InAs/Si [16], GaInAs/GaInNAs [17], InP/InGaAs [18], GaAsSb/InGaAs [19] and InAsP/GaAsP [20]. These tunnel junctions found numerous applications.…”

“…They had the J p values of only 10-1000 A cm −2 or less for the tunnel junctions fabricated by molecular beam epitaxy (MBE) [6,7,10,13], metal-organic vapour phase epitaxy (MOVPE) [8,9] and metal-organic chemical vapour deposition (MOCVD) [14,15]. We have achieved the fabrication of a sidewall GaAs tunnel junction with a record J p of 35 000 A cm −2 [11,12].…”