Gallium Arsenide Photonic Integrated Circuit Platform for Tunable Laser Applications

Verrinder, Paul; Wang, Lei; Fridlander, Joseph; Sang, Fengqiao; Rosborough, Victoria; Nickerson, Michael; Yang, Guangning; Stephen, Mark; Coldren, L.A.; Klamkin, Jonathan

doi:10.1109/jstqe.2021.3086074

Cited by 12 publications

(7 citation statements)

References 20 publications

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“…1 b, to continuously cover the visible to the mid-infrared, we focus on tuning the QPM by coarsely switching the poling period as well as fine-tuning the pump wavelength over ~25 nm. It is worth noting that this tuning range for the pump is compatible with the existing semiconductor lasers 39 . Moreover, the coarse switching of the poling period can be achieved without mechanical movements, for instance, by means of electro-optic routing (see Supplementary Section 12 ).…”

Section: Resultsmentioning

confidence: 64%

Visible-to-mid-IR tunable frequency comb in nanophotonics

Roy,

Ledezma,

Costa

et al. 2023

Nat Commun

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Optical frequency comb is an enabling technology for a multitude of applications from metrology to ranging and communications. The tremendous progress in sources of optical frequency combs has mostly been centered around the near-infrared spectral region, while many applications demand sources in the visible and mid-infrared, which have so far been challenging to achieve, especially in nanophotonics. Here, we report widely tunable frequency comb generation using optical parametric oscillators in lithium niobate nanophotonics. We demonstrate sub-picosecond frequency combs tunable beyond an octave extending from 1.5 up to 3.3 μm with femtojoule-level thresholds on a single chip. We utilize the up-conversion of the infrared combs to generate visible frequency combs reaching 620 nm on the same chip. The ultra-broadband tunability and visible-to-mid-infrared spectral coverage of our source highlight a practical and universal path for the realization of efficient frequency comb sources in nanophotonics, overcoming their spectral sparsity.

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Section: Resultsmentioning

confidence: 64%

Visible-to-mid-IR tunable frequency comb in nanophotonics

Roy,

Ledezma,

Costa

et al. 2023

Nat Commun

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“…Our results show that ultrawidely tunable infrared sources can be implemented on the thin-film lithium niobate platform, adding to the increasingly large set of functionalities available in this platform ( 29 ) and complementing the recent demonstration of tunable near-infrared DBR lasers ( 23 ). The threshold and required pump tuning range of our OPOs are within the reach of low-cost near-infrared laser diodes.…”

Section: Discussionmentioning

confidence: 65%

“…1A , where more than 1500 nm of tuning around 2 μm for the signal and idler is obtained by tuning the pump wavelength around 1 μm by less than 30 nm. Such a tuning range for the pump is already available from integrated distributed Bragg reflector (DBR) semiconductor lasers ( 23 ). Such magnification in tuning range from the pump toward the signal and idler (a factor of ~12 in frequency units) is obtained through a dispersion-engineered quasi-phase–matched OPO design with a spectrally selective cavity as depicted in Fig.…”

Section: Resultsmentioning

confidence: 99%

Octave-spanning tunable infrared parametric oscillators in nanophotonics

et al. 2023

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Widely tunable coherent sources are desirable in nanophotonics for a multitude of applications ranging from communications to sensing. The mid-infrared spectral region (wavelengths beyond 2 μm) is particularly important for applications relying on molecular spectroscopy. Among tunable sources, optical parametric oscillators typically offer some of the broadest tuning ranges; however, their implementations in nanophotonics have been limited to narrow tuning ranges in the infrared or to visible wavelengths. Here, we surpass these limits in dispersion-engineered periodically poled lithium niobate nanophotonics and demonstrate ultrawidely tunable optical parametric oscillators. Using 100 ns pulses near 1 μm, we generate output wavelengths tunable from 1.53 μm to 3.25 μm in a single chip with output powers as high as tens of milliwatts. Our results represent the first octave-spanning tunable source in nanophotonics extending into the mid-infrared, which can be useful for numerous integrated photonic applications.

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“…Heterogeneous and monolithic integration of thin and thick nitride photonics with materials that cannot withstand high annealing temperatures is inhibited by incompatibility with the high-temperature nitride growth and high-temperature post-oxide cladding annealing process used to achieve today’s low losses. Heterogeneous and monolithic integration material platforms of interest include silicon photonic circuits 30 , GaAs and InP semiconductor circuits 31 , 32 , and nonlinear materials such as lithium niobate 33 and tantalum pentoxide (tantala) 34 as well as materials for thermal engineering such as quartz substrates 35 . For example, efforts to limit the process temperature to under 400 °C can prevent crystallization in nonlinear tantala waveguides 34 and enable processing waveguides directly on silicon electronics, silicon photonic circuits 30 , 36 , thin film lithium niobate 33 , and III–V semiconductors 31 , 32 , 37 .…”

Section: Introductionmentioning

confidence: 99%

Anneal-free ultra-low loss silicon nitride integrated photonics

Bose,

Harrington,

Isichenko

et al. 2024

Light Sci Appl

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Heterogeneous and monolithic integration of the versatile low-loss silicon nitride platform with low-temperature materials such as silicon electronics and photonics, III–V compound semiconductors, lithium niobate, organics, and glasses has been inhibited by the need for high-temperature annealing as well as the need for different process flows for thin and thick waveguides. New techniques are needed to maintain the state-of-the-art losses, nonlinear properties, and CMOS-compatible processes while enabling this next generation of 3D silicon nitride integration. We report a significant advance in silicon nitride integrated photonics, demonstrating the lowest losses to date for an anneal-free process at a maximum temperature 250 °C, with the same deuterated silane based fabrication flow, for nitride and oxide, for an order of magnitude range in nitride thickness without requiring stress mitigation or polishing. We report record low anneal-free losses for both nitride core and oxide cladding, enabling 1.77 dB m-1 loss and 14.9 million Q for 80 nm nitride core waveguides, more than half an order magnitude lower loss than previously reported sub 300 °C process. For 800 nm-thick nitride, we achieve as good as 8.66 dB m−1 loss and 4.03 million Q, the highest reported Q for a low temperature processed resonator with equivalent device area, with a median of loss and Q of 13.9 dB m−1 and 2.59 million each respectively. We demonstrate laser stabilization with over 4 orders of magnitude frequency noise reduction using a thin nitride reference cavity, and using a thick nitride micro-resonator we demonstrate OPO, over two octave supercontinuum generation, and four-wave mixing and parametric gain with the lowest reported optical parametric oscillation threshold per unit resonator length. These results represent a significant step towards a uniform ultra-low loss silicon nitride homogeneous and heterogeneous platform for both thin and thick waveguides capable of linear and nonlinear photonic circuits and integration with low-temperature materials and processes.

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Gallium Arsenide Photonic Integrated Circuit Platform for Tunable Laser Applications

Cited by 12 publications

References 20 publications

Visible-to-mid-IR tunable frequency comb in nanophotonics

Visible-to-mid-IR tunable frequency comb in nanophotonics

Octave-spanning tunable infrared parametric oscillators in nanophotonics

Anneal-free ultra-low loss silicon nitride integrated photonics

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