Gallium Nitride and Silicon Transistors on 300 mm Silicon Wafers Enabled by 3-D Monolithic Heterogeneous Integration

Then, Han Wui; Radosavljević, M.; Jun, Kimin; Koirala, Pratik; Krist, B.; Talukdar, Tushar K.; Thomas, N.; Fischer, P.

doi:10.1109/ted.2020.3034076

Cited by 43 publications

(12 citation statements)

References 21 publications

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“…As is known, traditional GaAs technology has been employed in the terminal applications mentioned above. However, as a significant breakthrough, low voltage GaN technology is able to deliver higher PAE than GaAs technology at the same output power level to enable lower power consumption [5], exhibiting the application space of GaN technology could be expanded beyond the existing high voltage RF electronics to include low voltage ones [6], [7]. What's more, GaN technology has the superiority in bandwidth than GaAs technology, which makes it possible to realize high speed broadband communication as well as significant reduction in the number of power amplifier (PA), the chip area and the cost for mobile terminals.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Zhou

Zhu

et al. 2021

IEEE J. Electron Devices Soc.

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In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analysed from the perspective of DC and pulse characteristics, for terminal applications whose operating voltage is usually in the range of 3 to 15 V. Device fabrication is performed on mature AlGaN/GaN heterojunction as well as strongly polarized InAlN/GaN heterojunction, to make a comparison of low voltage RF power capability between two devices. Although it suffers from relatively severe RF dispersion, InAlN/GaN HEMT delivers higher output power density (Pout) than its opponent, benefiting from the lower parasitic resistance and knee voltage as well as higher output current density. At 8 GHz, Pout of 1.62 W/mm and 1.10 W/mm are achieved for InAlN/GaN and AlGaN/GaN HEMT, respectively, both of which are biased at class AB operation and Vds of 9 V. However, the tremendous degradation of power added efficiency (PAE) occurs as the higher drain voltage is applied on InAlN/GaN HEMT, as the result of the severe gate leakage. What is more, a higher PAE is more necessary than Pout for terminal applications. Either InAlN/GaN HEMT or AlGaN/GaN HEMT has its own specific voltage range to deliver higher PAE. Concretely, InAlN/GaN HEMT is more suitable to applications with operating voltage not exceeding 6 V, and AlGaN/GaN HEMT is preferred for ones with relatively higher voltage, accompanied by the decent PAE as high as 62% to 66% and moderate Pout to meet the demand of various low voltage terminal applications.

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Section: Introductionmentioning

confidence: 99%

“…Up to now, only a few researches on low voltage GaN HEMTs have been demonstrated, most of which are concerned with strongly polarized InAlN/GaN heterojunction [5][6][7][8]. And the low voltage RF power performance of AlGaN/GaN HEMT is rarely reported [4].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Zhou

Zhu

et al. 2021

IEEE J. Electron Devices Soc.

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“…Recently, the high energy efficiency of optical switches based on semiconductor-insulator-semiconductor (SIS) structures has been reported, reaching femto- and even attojoules per operation when using a design of hybrid structures based on III-V/Si semiconductor pairs [ 1 , 2 , 3 , 4 , 5 ]. The development of more energy-efficient switches, compared to thermo-optical or MEMS devices, means real progress in the implementation of not only fast intrachip communication with switch frequencies of up to 200 GHz [ 4 , 5 , 6 , 7 , 8 ], but also perspectives in building deep learning artificial neural networks based on ferroelectric transistors (FeFET), optical or quantum gates [ 9 , 10 ] compatible with the industrial CMOS technology. Hybrid III-V/Si structures noticeably increase the complexity of mass production of integral circuits (ICs) by the industrial CMOS silicon technology.…”

Section: Introductionmentioning

confidence: 99%

Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates

et al. 2021

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Silicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The “diode-like” currents through the symmetric atomic layer deposited (ALD) HfO2/Al2O3/HfO2… nanolayers with a highest rectification coefficient 103 are observed and explained by the asymmetry of the upper and lower heterointerfaces formed by bonding and ALD processes. As a result, different spatial charge regions (SCRs) are formed on both insulator sides. The lowest leakages are observed through the stacks, with total Al2O3 thickness values of 8–10 nm, which also provide a diffusive barrier for hydrogen. The dominant mechanism of electron transport through the built-in insulator at the weak field E < 1 MV/cm is thermionic emission. The Poole-Frenkel (PF) mechanism of emission from traps dominates at larger E values. The charge carriers mobility 100–120 cm2/(V s) and interface states (IFS) density 1.2 × 1011 cm−2 are obtained for the n-p SIS structures with insulator HfO2:Al2O3 (10:1) after rapid thermal annealing (RTA) at 800 °C. The drain current hysteresis of pseudo-metal-oxide-semiconductor field effect transistor (MOSFET) with the memory window 1.2–1.3 V at the gate voltage |Vg| < ±2.5 V is maintained in the RTA treatment at T = 800–900 °C for these transistors.

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“…Increasing performance and maturity of the III-N material system in electronic applications, such as in high-electron mobility transistors (HEMTs), has made the (Al,Ga)N system an attractive choice for next generation electronics [1][2][3]. The success of the nitrides has come at a time when integration of different materials, to utilize each of their advantageous properties, is of great interest [4][5][6][7][8][9][10]. In general, the integration of various materials systems can be done either through growth-based integration, where one material is grown on or with another, or processing-based integration, where the materials are grown separately and then combined during device processing steps [6].…”

Section: Introductionmentioning

confidence: 99%

Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine

et al. 2021

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The integration of different electronic materials systems together has gained increasing interest in recent years, with the III-nitrides being a favorable choice for a variety of electronic applications. To increase flexibility in integration options, growing nitrides material directly on semi-processed wafers would be advantageous, necessitating low temperature (LT) growth schemes. In this work, the growth of AlN and GaN was conducted via metalorganic chemical vapor deposition (MOCVD) using both NH3 and DMHy as N-precursors. The relationships between growth rate versus temperature were determined within the range of 300 to 550 °C. The growth of AlN/GaN heterostructures was also investigated herein, employing flow modulation epitaxy MOCVD at 550 °C. Subsequent samples were studied via atomic force microscopy, X-ray diffraction, TEM, and Hall measurements. Two-dimensional electron gases were found in samples where the LT AlN layer was grown with NH3, with one sample showing high electron mobility and sheet charge of 540 cm2/V∙s and 3.76 × 1013 cm−2, respectively. Inserting a LT GaN layer under the LT AlN layer caused the mobility and charge to marginally decrease while still maintaining sufficiently high values. This sets the groundwork towards use of LT nitrides MOCVD in future electronic devices integrating III-nitrides with other materials.

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Gallium Nitride and Silicon Transistors on 300 mm Silicon Wafers Enabled by 3-D Monolithic Heterogeneous Integration

Cited by 43 publications

References 21 publications

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates

Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine

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