Gallium vacancies and gallium antisites as acceptors in electron-irradiated semi-insulating GaAs

Corbel, C.; Pierre, F.; Saarinen, K.; Hautojärvi, P.; Moser, P.

doi:10.1103/physrevb.45.3386

Cited by 130 publications

(47 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[23][24][25][26] In this model, the trapping coefficient V to a neutral vacancy is independent of temperature and to a negatively charged vacancy it varies as T −0.5 . The trapping rate of positrons into the vacancies ͑concentration c V ͒ is V = V c V .…”

Section: Positron Trapping At Defectsmentioning

confidence: 99%

Introduction and recovery of point defects in electron-irradiated ZnO

et al. 2005

Self Cite

View full text Add to dashboard Cite

We have used positron annihilation spectroscopy to study the introduction and recovery of point defects in electron-irradiated n-type ZnO. The irradiation ͑E el = 2 MeV, fluence 6 ϫ 10 17 cm −2 ͒ was performed at room temperature, and isochronal annealings were performed from 300 to 600 K. In addition, monochromatic illumination of the samples during low-temperature positron measurements was used in identification of the defects. We distinguish two kinds of vacancy defects: the Zn and O vacancies, which are either isolated or belong to defect complexes. In addition, we observe negative-ion-type defects, which are attributed to O interstitials or O antisites. The Zn vacancies and negative ions act as compensating centers and are introduced at a concentration ͓V Zn ͔Ӎc ion Ӎ 2 ϫ 10 16 cm −3 . The O vacancies are introduced at a 10-times-larger concentration ͓V O ͔Ӎ3 ϫ 10 17 cm −3 and are suggested to be isolated. The O vacancies are observed as neutral at low temperatures, and an ionization energy of 100 meV could be fitted with the help of temperature-dependent Hall data, thus indicating their deep donor character. The irradiation-induced defects fully recover after the annealing at 600 K, in good agreement with electrical measurements. The Zn vacancies recover in two separate stages, indicating that the Zn vacancies are parts of two different defect complexes. The O vacancies anneal simultaneously with the Zn vacancies at the later stage, with an activation energy of E V,O m = 1.8± 0.1 eV. The negative ions anneal out between the two annealing stages of the vacancies.

show abstract

Section: Positron Trapping At Defectsmentioning

confidence: 99%

Introduction and recovery of point defects in electron-irradiated ZnO

et al. 2005

Self Cite

View full text Add to dashboard Cite

show abstract

“…[13][14][15][16] In this model, the trapping coefficient V to a neutral vacancy is independent of temperature and to a negatively charged vacancy it varies as T −0.5 . The trapping rate of positrons into the vacancies ͑concentration c V ͒ is V = V c V .…”

Section: Positron Trapping At Defectsmentioning

confidence: 99%

Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

et al. 2007

View full text Add to dashboard Cite

“…15 According to electron irradiation studies, isolated Ga vacancies are not stable in the GaAs lattice at temperatures above 300°C. 20 Thus, the vacancies in our samples grown at Ͼ500°C probably belong to defect complexes with some other defects or impurities. The C and H impurity concentrations in MOVPE-grown GaInNAs are typically 10 17 respectively.…”

mentioning

confidence: 99%

Observation of defect complexes containing Ga vacancies in GaAsN

Toivonen

Hakkarainen

Sopanen

et al. 2003

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found to contain Ga vacancies in defect complexes. The density of the vacancy complexes increases rapidly to the order of 10 18 cm Ϫ3 with increasing N composition and decreases after annealing at 700°C. The anticorrelation of the vacancy concentration and the integrated photoluminescence intensity suggests that the Ga vacancy complexes act as nonradiative recombination centers.

show abstract

Gallium vacancies and gallium antisites as acceptors in electron-irradiated semi-insulating GaAs

Cited by 130 publications

References 42 publications

Introduction and recovery of point defects in electron-irradiated ZnO

Introduction and recovery of point defects in electron-irradiated ZnO

Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

Observation of defect complexes containing Ga vacancies in GaAsN

Contact Info

Product

Resources

About