Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

Tuomisto, Filip; Ranki, V.; Look, David C.; Farlow, G. C.

doi:10.1103/physrevb.76.165207

Cited by 76 publications

(75 citation statements)

References 33 publications

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“…Notice for comparison that a 5% increase in lifetime in one material due to vacancies is typically accompanied by a change in the Doppler parameters of much lower magnitude than the difference between materials. 19,20 Indeed, the bulk lifetime estimated from the present data on ZnGeAs 2 , B = 220-230 ps, is very close to the value obtained in GaAs: B = 230 ps. 18 The values for B in Table II are all within experimental accuracy.…”

Section: Discussionsupporting

confidence: 56%

Native vacancy defects in Zn1−x(Mn,Co)xGeAs2 studied with positron annihilation spectroscopy

Kilański

Zubiaga

Tuomisto

et al. 2009

Journal of Applied Physics

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We have studied vacancy defects in chalcopyrite semimagnetic semiconducting mixed Zn 1−x ͑Mn, Co͒ x GeAs 2 bulk crystals with alloy composition x varying between 0.052 to 0.182 using positron annihilation spectroscopy. We identified As vacancies, potentially complexed with the transition metal alloying elements, in all the studied samples, while no cation vacancy related defects were detected. The positron lifetimes for the bulk ZnGeAs 2 lattice and neutral As vacancy were determined to be B = 220-230 ps and As = 300Ϯ 10 ps, respectively. Our results also show that the p-type conductivity in the samples is not due to cation vacancy related acceptor centers. The As vacancies were found to be present at such low concentrations that they cannot be responsible for the compensation of the p-type conductivity or the reduction of mobility in the Zn 1−x ͑Mn, Co͒ x GeAs 2 samples.

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Section: Discussionsupporting

confidence: 56%

Native vacancy defects in Zn1−x(Mn,Co)xGeAs2 studied with positron annihilation spectroscopy

Kilański

Zubiaga

Tuomisto

et al. 2009

Journal of Applied Physics

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“…In the case of GaN, τ B ≈ 160 ps and τ V = 235 ± 10 ps for Ga vacancies and Ga vacancy -oxygen complexes. [80,93] For V Ga -H n complexes the lifetimes are between those of the isolated V Ga and the GaN …”

Section: Positron Annihilation Spectroscopymentioning

confidence: 99%

“…[88] Positron methods have been widely applied to study vacancy defects in bulk nitride semiconductors, [34,78,80,[90][91][92][93][94][95] including crystals grown by the ammonothermal method. [44,79,96] Positrons implanted into a sample can get trapped in and localize at neutral and negative vacancies due to the missing positive ion core.…”

Section: Positron Annihilation Spectroscopymentioning

confidence: 99%

Defects in Single Crystalline Ammonothermal Gallium Nitride

Suihkonen

Pimputkar

Sintonen

et al. 2017

Adv Elect Materials

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Native bulk gallium nitride (GaN) has emerged as an alternative for sapphire and silicon as a substrate material for III‐N devices. While quasi‐bulk GaN substrates are currently commercially available, single crystal GaN substrates are considered essential for future high performance light emitters and power devices. The ammonothermal method is currently considered one of the most feasible methods to grow large truly bulk crystals of GaN at low cost and high structural quality. High crystalline quality GaN substrates sliced from ammonothermally grown crystals have been demonstrated and utilized in homoepitaxy for III‐N devices. However, despite the high crystalline quality the properties of as‐grown ammonothermal GaN crystals and substrates are affected by the presence of impurities and other defects that hinder their use for device applications. Here, the main developments of ammonothermal growth of GaN and the effects of impurities, native point defects, and dislocations on the material properties are summarized. Additionally, measurement techniques that enable the evaluation of point defect concentration and low dislocation density distribution over a large area on bulk GaN substrates are reviewed.

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“…15 Further, in order to be certain of studying only the magnetic effects produced by intrinsic defects, they need to be introduced in a controlled way, e.g., through particle irradiation. 16 In this work, we investigate the magnetic properties of 3 lm-thick GaN layers grown by metal-organic chemical-vapor deposition (MOCVD) on sapphire substrates with point defects controllably created via high energy He irradiation, as measured by Tuomisto et al in Ref. 17.…”

mentioning

confidence: 99%

“…16 Unintentional oxygen and hydrogen doping with concentrations around 10 17 cm À3 is typical of MOCVD-GaN. 20 In-grown Gavacancies are usually complexed with oxygen impurities.…”

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confidence: 99%

Magnetically active vacancy related defects in irradiated GaN layers

et al. 2012

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We present the studies of magnetic properties of 2 MeV 4He+-irradiated GaN grown by metal-organic chemical-vapor deposition. Particle irradiation allowed controllable introduction of Ga-vacancy in the samples. The magnetic moments with concentrations changing between 4.3...8.3x10^17 cm^-3 showing superparamagnetic blocking at room temperature are observed. The appearance of clear hysteresis curve at T = 5 K with coercive field of about H_C = 270 Oe suggests that the formation of more complex Ga vacancy related defects is promoted with increasing Ga vacancy content. The small concentration of the observed magnetically-active defects with respect to the total Ga- vacancy concentration suggests that the presence of the oxygen/hydrogen-related vacancy complexes is the source of the observed magnetic moments.Comment: 3 pages, 3 figure

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Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN

Cited by 76 publications

References 33 publications

Native vacancy defects in Zn1−x(Mn,Co)xGeAs2 studied with positron annihilation spectroscopy

Native vacancy defects in Zn1−x(Mn,Co)xGeAs2 studied with positron annihilation spectroscopy

Defects in Single Crystalline Ammonothermal Gallium Nitride

Magnetically active vacancy related defects in irradiated GaN layers

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