Galvanic Effect of Au–Ag Electrodes for Conductive Bridging Resistive Switching Memory

Kuo, Chi Cun; Chen, I Chieh; Shih, Chih Cheng; Chang, Kuan; Huang, Chao; Chen, Po Hsun; Chang, Ting‐Chang; Tsai, Tzu-I; Chang, Jing Shuen; Huang, Jing

doi:10.1109/led.2015.2496303

Cited by 33 publications

(14 citation statements)

References 45 publications

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“…Paired with Ag, both unidirectional and bidirectional threshold switching have been reported, with either lateral or vertical configurations, in addition to CBRAMs . Bricalli et al found bidirectional threshold switching in a C/SiO x /Ag stack, as shown in Figure l…”

Section: Methodsmentioning

confidence: 97%

Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

Wang

Rao

Midya

et al. 2017

Adv Funct Materials

293

233

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Threshold switches with Ag or Cu active metal species are volatile memristors (also termed diffusive memristors) featuring spontaneous rupture of conduction channels. The temporal dynamics of the conductance evolution is closely related to the electrochemical and diffusive dynamics of the active metals which could be modulated by electric field strength, biasing duration, temperature, and so on. Microscopic pictures by electron microscopy and quantitative thermodynamics modeling are examined to give insights into the underlying physics of the switching. Depending on the time scale of the relaxation process, such devices find a variety of novel applications in electronics, ranging from selector devices for memories to synaptic devices for neuromorphic computing.is applied due to the formation of a conduction channel(s) with Ag or Cu atoms. Unlike the ECM cells, the resistance recovers back spontaneously upon cessation of the external bias, yielding a superior I-V nonlinearity [4][5][6][7][8][9][10][11] and unique temporal conductance evolution dynamics. [7,12,13] Such a relaxation process is due to the physical dissolution of the metallic conduction channel under driving forces such as minimization of interfacial energy. In case active metals are used as electrodes, these metals may be doped into the dielectrics eventually under the combined effect of electric fields, thermal diffusion, which may lead to a reduced threshold voltage for the subsequent switching, similar to the process called "electroforming." The unique delay and relaxation dynamics of Ag and Cu-based threshold switches make them suitable for innovative applications in circuits and systems.Threshold switches with Ag or Cu active metals are also termed as "diffusive memristors" [7] to emphasize the underlying nature of the diffusive dynamics of the metal species. Factors including bias amplitude, biasing duration, as well as ambient temperature have been observed to have an impact on such a process, showing a wide range of dynamical properties, which could be exploited as access devices for memories with fast transition (e.g., <100 ns) or synaptic emulators with a relatively slower evolution (e.g., >1 µs). We survey the recently developed material systems which have exhibited this kind of threshold switching. New evidences by electron microscopy and quantitatively thermodynamic modeling are examined to give insights into the underlying physics of the mechanisms. We also discuss applications enabled by the advent of such threshold switches. Temporal Response of the SwitchingThe dynamical response of threshold switching is a critical property for many applications but has been characterized to a lesser extent. The temporal responses could be probed by applying voltage pulses and measuring the resulting currents in the time domain. It is a general observation in both ECM and threshold switches that the conductance experienced a transition from insulating state to conducting state after a finite time duration (delay time) under the external bias, as ill...

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Section: Methodsmentioning

confidence: 97%

Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

Wang

Rao

Midya

et al. 2017

Adv Funct Materials

293

233

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“…Although the impact of Ag active TE on SiO 2 -CBRAMs has been studied by other groups [ 62 , 63 ], the main contribution of the present work is the demonstration of a relatively sharp transition slope, low V SET voltage and huge memory window. Moreover, we have to underline the completely forming-free nature of the proposed memory concept that is always beneficial in terms of periphery circuit design.…”

Section: Discussionmentioning

confidence: 95%

Emulating Artificial Synaptic Plasticity Characteristics from SiO2-Based Conductive Bridge Memories with Pt Nanoparticles

Bousoulas

Papakonstantinopoulos

Kitsios

et al. 2021

Micromachines

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The quick growth of information technology has necessitated the need for developing novel electronic devices capable of performing novel neuromorphic computations with low power consumption and a high degree of accuracy. In order to achieve this goal, it is of vital importance to devise artificial neural networks with inherent capabilities of emulating various synaptic properties that play a key role in the learning procedures. Along these lines, we report here the direct impact of a dense layer of Pt nanoparticles that plays the role of the bottom electrode, on the manifestation of the bipolar switching effect within SiO2-based conductive bridge memories. Valuable insights regarding the influence of the thermal conductivity value of the bottom electrode on the conducting filament growth mechanism are provided through the application of a numerical model. The implementation of an intermediate switching transition slope during the SET transition permits the emulation of various artificial synaptic functionalities, such as short-term plasticity, including paired-pulsed facilitation and paired-pulse depression, long-term plasticity and four different types of spike-dependent plasticity. Our approach provides valuable insights toward the development of multifunctional synaptic elements that operate with low power consumption and exhibit biological-like behavior.

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“…Electrode alloying provides a promising scheme to solve this problem because the position and source of the filaments and the electrochemical activity can be kept under control. The electrode alloyed by one active metal (Ag, Cu) and Al is responsible for the improved electric properties by forming AlO x in the interface. − The alloy of Cu and Te was also adopted as the top active electrode to achieve the performance improvement in Cu–Te alloy electrode CBRAM and Cu 2 GeTe 3 alloy electrode CBRAM. , Later, the galvanic effect was proposed to explain the forming-free process and improved electric properties in SiO 2 -based CBRAM using Ag–Au and Ag–Cu alloys as the top electrodes. , Now, the research interest is as follows: Which kind of filament can be formed and can it be directly observed in CBRAM with the alloy electrode? Can the key performance be enhanced via electrode alloying?…”

Section: Introductionmentioning

confidence: 99%

“…22,23 Later, the galvanic effect was proposed to explain the forming-free process and improved electric properties in SiO 2 -based CBRAM using Ag−Au and Ag−Cu alloys as the top electrodes. 24,25 Now, the research interest is as follows: Which kind of filament can be formed and can it be directly observed in CBRAM with the alloy electrode? Can the key performance be enhanced via electrode alloying?…”

Section: Introductionmentioning

confidence: 99%

Performance Improvement of Conductive Bridging Random Access Memory by Electrode Alloying

et al. 2020

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Large parameter variability is identified as one of the main problems in conductive bridging random access memory (CBRAM) at the device level impeding large-scale commercial applications. Here, we achieve performance improvement by electrode alloying in sandwich-structure Ag 65 Cu 35 /HfO x /Pt devices. Cu conductive filaments have been demonstrated to be responsible for the resistive switching behaviors in Ag−Cu alloy electrode CBRAM via direct observation by transmission electron microscopy. Compared with Cu/HfO x /Pt devices, the alloy electrode devices show lower forming and SET voltages, better SET voltage distribution uniformity, and a faster response speed. The alloy phase diagram combined with the galvanic effect is proposed to explain the formation of Cu conductive filaments and the improved switching uniformity in CBRAM with an Ag−Cu alloy electrode. The use of an Ag−Cu alloy electrode and understanding its role would advance the implementation of high-density integration of CBRAM.

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Galvanic Effect of Au–Ag Electrodes for Conductive Bridging Resistive Switching Memory

Cited by 33 publications

References 45 publications

Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

Emulating Artificial Synaptic Plasticity Characteristics from SiO2-Based Conductive Bridge Memories with Pt Nanoparticles

Performance Improvement of Conductive Bridging Random Access Memory by Electrode Alloying

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