Galvanomagnetic Properties of p‐Hg_1−xCd_xTe

Abstract

A three level model for one divalent acceptor (Hg vacancy) and one monovalent acceptor (foreign atom) is suggested. The hole mobility is determined for p-like wave functions (polar phonons and ionized impurities). Low temperature (10 to 300 K ) galvanomagnetic measurements of undoped pHgl-,Cd,Te (5 FZ 0.2) are reported. A simultaneous analysis of the hole concentration and Hall mobility data in the region 10 t o 100 K and Hall coefficient and conductivity data in the region 100 to 300 K yield ionization energies of z 6 meV and z 0.7Eg (energy gap) for the Hg vacancy and = 12 meV for the foreign acceptor. I n the temperature region 100 to 300 K the mobility of electrons is determined, too. Es wird ein Drei-Niveau-Model1 fur einen divalenten Akzeptor (Hg-Leerstelle) und einen monovalenten Akzeptor (Fremdatom) vorgesohlagen. Die Locherbeweglichkeit wird fur p-Wellenfunktionen (polare Phononen und ionisierte Storstellen) bestimmt. Galvanomagnetische Messungen bei tiefen Temperaturen (10 bis 300 K) von undotiertem p-Hgl -,Cd,Te ( z = 0,2) werden mitgeteilt. Eine gleichzeitige Analyse der Locherkonzentrations-und Hallbeweglichkeitswerte im Bereich 10 bis 100 K und des Hallkoeffizienten und der Leitfahigkeitswerte im Bereich 100 bis 300 K ergibt Ionisierungsenergien von 2 6 meV und = 0,7E, (Energieliicke) fur die Hg-Leerstelle und = 12 meV fur den Fremdakzeptor. I m Temperaturbereich 100 bis 300 K wird die Beweglichkeit der Elcktronen ebenfalls bestimmt.

Galvanomagnetic and thermoelectric properties of p-Hg1-xCdxTe (xapprox. 0.22)

“…Such points were excluded from the analysis and only the low-temperature conductivity was then used. Other parameters were fixed to the values given in [4]-especially the hh effective mass m h = 0.7m 0 . The characteristics of such fits were presented in [20].…”

“…V Hg is generally a divalent acceptor. The two levels are assumed to form the IL in the gap, creating a coupled shallow and deep acceptor [4]. The acceptor-type foreign atoms form shallow ILs.…”

Optical and photoelectrical properties of Hg0.6Cd0.4Te

“…(ii) From the transport data obtained in the 4.2-300 K range a level analysis was made in the framework of neutrality equation (see reference [3]). The Level positions as well as the energy where t h e absorption coefficient reaches too0 cm-' are marked by arrows: The Spectrum has been corrected for interference from multiple reflections.…”

Thermoelectric Properties of p‐Hg1−xCdxTe

“…Samples for thermoelectric measurements were prepared from Hg, -,Cd,Te single crystals which were grown by a modified Bridgman method with constant melt composition [18]. The values x of the samples were determined by the absorption near the fundamental absorption edge, using ( 5 ) for the energy gap.…”