Gamma irradiation induced microstructural modification and electrical conductivity of bakelite resistive plate chamber material

Kumar, K. V. Aneesh; Raghavendra, M.; Hegde, Vinayakprasanna N.; Prakash, A. P. Gnana; Ravikumar, H. B.

doi:10.1007/s10967-020-07565-z

Cited by 4 publications

(1 citation statement)

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“…High−energy particles make electrons leave their original positions under irradiation. New electron−hole pairs are formed which increases the leakage current [7]. At the same time, high−energy particles may also break the Si−O bond and form the Si−Si bond, resulting in irreversible damage to the oxide layer [8].…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric Domain Intrinsic Radiation Resistance of Lithium Niobate Ferroelectric Single−Crystal Film

Li,

He,

Niu

et al. 2024

Crystals

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The study of the properties of ferroelectric materials against irradiation has a long history. However, anti−irradiation research on the ferroelectric domain has not been carried out. In this paper, the irradiation of switched domain structure is innovatively proposed. The switched domain of 700 nm lithium niobate (LiNbO3, LN) thin film remains stable after gamma irradiation from 1 krad to 10 Mrad, which was prepared by piezoresponse force microscopy (PFM). In addition, the changing law of domain wall resistivity is explored through different sample voltages, and it is verified that the irradiated domain wall conductivity is still larger than the domain. This domain wall current (DWC) property can be applied to storage, logic, sensing, and other devices. Based on these, a ferroelectric domain irradiation resistance model is established, which explains the reason at an atomic level. The results open a possibility for exploiting ferroelectric materials as the foundation in the application of space and nuclear fields.

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Section: Introductionmentioning

confidence: 99%