Gamma-ray irradiation-induced oxidation and disproportionation at the amorphous SiO₂/Si interfaces

Abstract

The performance of Gamma-ray irradiated silicon devices usually deteriorates due to the total ionizing dose (TID) effect. The common belief is that the TID mainly involves the change of charge...

Gamma-Ray Irradiation Induced Dielectric Loss of SiO2/Si Heterostructures in Through-Silicon Vias (TSVs) by Forming Border Traps

“…The TDIS results show that the defects are located in the dielectric (SiO 2 ) layer, corroborating the C – V analysis. The DLTS results correspond to the OT as well, and since it only characterizes the properties of defects close to the Si/SiO 2 interface, , the signal actually comes from the BT in entirety by definition. As the BT is known to behave somewhat differently from the OT deep inside SiO 2 , we further examine whether it is possible that the AC irradiation effect is due to the BT instead of the OT in general by theoretical analysis: by taking the possible BT change after gamma-ray irradiation in consideration, we find that even the very simple Maxwell–Wagner two-layer model can match the measured dielectric loss tangent data very well (Figure S6), which is not possible if the effect is due to OTs in general.…”