2000
DOI: 10.1049/el:20000296
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GaN/AlGaN high electron mobility transistors withf τ of 110 GHz

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Cited by 108 publications
(34 citation statements)
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“…[15][16][17][18][19][20][21] The f T saturation in the AlGaN/GaN HFETs appears even at the gate length of around 200 nm that is longer than that of the InP HFETs. Although this significantly impedes the devices working at higher frequencies with the reduction of the gate length, its mechanism is not understood yet.…”
Section: Introductionmentioning
confidence: 99%
“…[15][16][17][18][19][20][21] The f T saturation in the AlGaN/GaN HFETs appears even at the gate length of around 200 nm that is longer than that of the InP HFETs. Although this significantly impedes the devices working at higher frequencies with the reduction of the gate length, its mechanism is not understood yet.…”
Section: Introductionmentioning
confidence: 99%
“…Run-to-run reproducibility of 2DEG sheet resistance of GaN HFET layers grown on SiC substrates. Intentional variation of the thickness and composition of AlGaN Schottky barrier layer caused the scatter in values of sheet resistance in the area highlighted by a circle able to yield 50 nm gates on GaN [13]. Our power devices consist of multiple 100 mm wide gate fingers separated by source and drain contacts.…”
Section: Growth and Fabrication Of Gan Hfetsmentioning
confidence: 99%
“…The wide bandgap, high electron mobility, high critical electric field, and good thermal conductivity of gallium nitride (GaN) make GaN useful for high-power and hightemperature applications [1][2][3][4][5][6]. In recent studies, most of attention has been drawn to either silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) or high electron mobility transistors (HEMTs) [7][8][9][10][11][12].…”
Section: Introductionmentioning
confidence: 99%