GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals

Abstract

The characterizations of n-type doped GaN, p-type doped GaN and n-type doped In0.2Ga0.8N Schottky metal-semiconductor-metal (MSM) photodetectors were reported. The epilayers were grown on sapphire by metalorganic chemical vapor deposition (MOVCD). Schottky contacts were fabricated using Au, Ti, Ni and Pt metals. The dark and illuminated current–voltage characteristics of GaN and InGaN MSM photodetectors with different Schottky metals were studied. The n-GaN MSM photodetectors with Au Schottky contacts showed better responsivity than those with other metals and they were also better than Au/p-GaN and Ti/n-In0.2Ga0.8N MSMs. The effects of the pitch width between the interdigitate fingers and the thickness of Schottky metals on the characteristics of photocurrents were also studied.

Stokes Shift and Band Gap Bowing in InxGa1-xN (0.060 ≤ x ≤ 0.105) Grown by Metalorganic Vapour Phase Epitaxy

“…In x Ga 1−x N alloy system has received a great deal of interest due to an important number of applications such as light emitting diodes [1], laser diodes [2], visible blind photodetectors [3], and heterostructure field effect transistors [4]. For these applications, it is important to investigate the material's band gap as a function of its composition.…”

InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

“…[13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] Briefly, trimethylaluminum, trimethylgallium, trimethylindium, and ammonia were used as aluminum, gallium, indium, and nitrogen sources, respectively. Biscyclopentadienyl magnesium (CP 2 Mg) and disilane (Si 2 H 6 ) were used as the p-type and n-type doping sources, respectively.…”

GaN UV photodetector by using transparency antimony-doped tin oxide electrode

“…Since GaN possesses a direct wide band gap (E g ¼ 3.4 eV), its associated properties make it a promising candidate for ultraviolet (UV) detector application. To date, several groups have reported encouraging results for GaN-based photodetectors, such as the p-n junction diode [1], the p-i-n diode [2], and the metal-semiconductor-metal (MSM) photodetector [3]. Among these structures, MSM-based configuration is considered an attractive choice for fabricating UV detectors, given their fabrication simplicity and suitability for the monolithic integration of an optical receiver.…”