GaN and InN Nanowires: Growth and Optoelectronic Properties

Stoïca, T.; Sutter, Eli; Calarco, Raffaella

doi:10.1007/978-3-642-12070-1_4

Cited by 2 publications

(1 citation statement)

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“…As commented before, when the surface depleted area is larger than the NW radius no neutral region exists in the wire core and the surface band bending is effectively reduced. Based on the work of Stoica et al [23], we estimate the band bending to be around 0.25 eV for a NW with 25 nm diameter provided the donor density remains of the order of 3.8×10 18 cm −3 . The situation for the p-type NW is more difficult to analyze, since studies on the band bending of m-polar surfaces of p-type GaN are scarce [24].…”

Section: Response To Illumination P-n Junction and Nw/hopg Contactmentioning

confidence: 93%

Direct assessment of p–n junctions in single GaN nanowires by Kelvin probe force microscopy

et al. 2016

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Making use of Kelvin probe force microscopy, in dark and under ultraviolet illumination, we study the characteristics of p-n junctions formed along the axis of self-organized GaN nanowires (NWs).We map the contact potential difference of the single NW p-n junctions to locate the space charge region and directly measure the depletion width and the junction voltage. Simulations indicate a shrinkage of the built-in potential for NWs with small diameter due to surface band bending, in qualitative agreement with the measurements. The photovoltage of the NW/substrate contact is studied by analysing the response of NW segments with p-and n-type doping under illumination. Our results show that the shifts of the Fermi levels, and not the changes in surface band bending, are the most important effects under above band-gap illumination. The quantitative electrical information obtained here is important for the use of NW p-n junctions as photovoltaic or rectifying devices at the nanoscale, and is especially relevant since the technique does not require the formation of ohmic contacts to the NW junction.2

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Section: Response To Illumination P-n Junction and Nw/hopg Contactmentioning

confidence: 93%

Direct assessment of p–n junctions in single GaN nanowires by Kelvin probe force microscopy

et al. 2016

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Finite-difference time-domain analysis of the tunability of Anderson localization of light in self-organized GaN nanowire arrays

Paul

Mimi

Hazari

et al. 2019

Journal of Applied Physics

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The possibility of tuning the resonance frequency and photon lifetime corresponding to Anderson localized resonant modes is investigated using the finite-difference time-domain technique. Experimentally obtained dimensions of molecular beam epitaxy grown self-organized nanowires on silicon have been employed to systematically generate disordered patterns, where multiple-scattering mediated light trapping has been analyzed. The results of our analysis indicate that in spite of the inherent randomness of the scattering medium, it is possible to control the wavelength and strength of the localized modes by varying dimensional features of the nanowires. The localization wavelength in the medium can be tuned toward a higher wavelength by increasing the average diameter of nanowires, whereas cavity quality factors in the order of 105 can be attained by increasing the fill factor of the array. The observed behavior is explained and empirically modeled, and the relation is found to be in good agreement with the predicted localization characteristics for experimentally grown self-assembled nanowires. The results of the analysis indicate that in spite of the absence of periodicity, localization in this medium is related to interference effects resulting from Bragg-like diffractions, which in effect results in the observed systematic variation of localization characteristics as nanowire dimensions are varied.

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GaN and InN Nanowires: Growth and Optoelectronic Properties

Cited by 2 publications

References 58 publications

Direct assessment of p–n junctions in single GaN nanowires by Kelvin probe force microscopy

Direct assessment of p–n junctions in single GaN nanowires by Kelvin probe force microscopy

Finite-difference time-domain analysis of the tunability of Anderson localization of light in self-organized GaN nanowire arrays

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