GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas

Shinohara, Kazuhiko; King, C.; Carter, Andrew D.; Regan, Eric; Arias, Andrea; Bergman, J.; Urteaga, M.; Brar, B.

doi:10.1109/led.2018.2797940

Cited by 34 publications

(12 citation statements)

References 14 publications

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“…15,16 Moreover, in recent years, the fin-shaped GaN-based HEMTs only with the gate on the sidewalls (dual-gate structure) have shown excellent electrostatic isolation between the source and drain, a low knee voltage, a gradual transconductance profile near threshold, and nearly constant gain along the load line. 17 Compared with GaN-based trigate fin-shaped HEMTs, the absence of the top gate contact in GaN-based dual-gate fin-shaped HEMTs makes it more important for the gate on the sidewalls to control the channel. Moreover, for the fabrication of high linearity GaN-based HEMTs based on the principle of transconductance compensation, 18 the control of threshold voltage is very important.…”

Section: Introductionmentioning

confidence: 99%

Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs

Zhang

et al. 2019

Int J Numerical Modelling

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In this paper, a systematic theoretical study on the fin-shaped AlGaN/GaN HEMTs with trigate structure and dual-gate structure is performed by TCAD simulation. The influence of different gate structures and fin width on the DC performance of the fin-shaped AlGaN/GaN high electron mobility transistors (HEMTs) are mainly studied and compared. A simplified physical analysis of the influence of fin width and gate structure on the threshold voltage is made. How to cite this article: Zhang M, Ma X, Mi M, et al. Influence of fin width and gate structure on the performance of AlGaN/GaN fin-shaped HEMTs. Int J Numer Model. 2019;e2641. https://doi.org/10.1002/jnm.2641 ZHANG ET AL. 7 of 7 performance of AlGaN/GaN fin-shaped HEMTs. Int J Numer Model. 2020;33:e2641. https://doi.

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Section: Introductionmentioning

confidence: 99%

Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs

Zhang

et al. 2019

Int J Numerical Modelling

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“…One can remove the top gate and use just the side-gates to control the channel (Figure 1b). Trigates [7] and super-lattice castellated field-effect transistors (SLCFETs) [8] are examples of Figure 1a, and buried dual gates (BRIDGE) [9] is example of Figure 1b. In Figure 1c, a laterally-gated transistor with a gate-channel separation is shown.…”

Section: Introductionmentioning

confidence: 99%

“…The lack of report on the dynamic performance is also present in RF devices. Although SLCFETs and BRIDGE transistors have been fully characterized in RF [8], [9], the potentially outstanding RF performance of laterally-gated transistors with gate-channel separation has not been shown.…”

Section: Introductionmentioning

confidence: 99%

“…For instance, at the relatively small drain voltage of 5 V, there is 200 times RON degradation, as shown in Figure 2d. While the gate control in a laterally-gated device with zero gate-channel separation can be quite strong and the devices are less sensitive to traps [9], by increasing the gate-channel distance to decrease the input capacitance, the relative influence of trapped carriers becomes potentially more dominant on the channel. Figure 3a shows the measured DC transfer characteristics of laterally-gated transistor on sapphire substrate with a 60-nmwide channel and 80-nm gate-to-channel separation, showing a threshold voltage of −8 V. The output characteristics of the device is shown in Figure 3b.…”

Section: Introductionmentioning

confidence: 99%

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On the Dynamic Performance of Laterally Gated Transistors

Nikoo

Santoruvo

Erine

et al. 2019

IEEE Electron Device Lett.

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Laterally-gated transistors have been proposed as an innovative device architecture in which a semiconducting channel is controlled by side gates. In this sense, the gate can either be in contact with the sidewalls or be separated by a gap. In the latter case, the relatively large transconductance together with the small gate capacitance offers a promising potential for future RF devices. The DC performance of these transistors has been studied in the literature, however, there is a lack of investigation on their dynamic performance. Here we show that the channel control in a laterally-gated transistor with gatechannel separation can come from either the gate electric field or the trapped carriers in the surface or bulk. The latter effect results in very slow time responses. We also show that trap states can be more dominant in degrading the dynamic performance of these devices than in planar-gate transistors. The measurement method employed in this letter can be used to determine whether the control is from the gate electric-field or trapped carriers. This study aims to clarify the related studies in the literature, and opens a way to understand and optimize and laterally-gated transistors.

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“…The device structure of GaN-HEMT is constructed with a superlattice structure of AlGaN and i-GaN. The superlattice structure exhibits a piezo effect and spontaneous polarization effect and generates two-dimensional electron gas at the interface between AlGaN and i-GaN [5]. Thus, a transistor layer that exhibits a low ON resistance is obtained by constructing a channel layer in GaN that should originally correspond to a high resistance material.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Drain Current Transient Response of Gate Pulse Voltage in AlGaN / GaN High Electron Mobility Transistors

Taguchi¹,

Akahori²,

Shimazu³

et al. 2018

Adv. sci. technol. eng. syst. j.

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Recently, several studies focus on a GaN material system that exhibits a significant probability of use in power devices including wide-gap semiconductors. However, the GaN-HEMT is also a structure that easily leads to crystal defects in AlGaN and i-GaN heterojunction. The aim of the study involved investigating the cause of the current collapse in GaN-HEMT after device construction. A GaN-HEMT with a field plate structure was subject to an environmental temperature change from 300 K to 400 K. A pulse voltage was applied to the gate electrode, and the transient response characteristic of the drain current was analyzed. Given the application of the pulse voltage on the gate electrode, charging and discharging of 2 DEG carriers was repeated with respect to crystal defects near the gate electrode. The charge / discharge reduction was observed via a sampling oscilloscope as a transient response. The transient response exhibited an evident dependence on temperature change. The dependence indicated a time constant change, and thus it was possible to calculate the activation energy of crystal defects trapping carriers. The results suggested that the crystal defect evaluation of GaN-HEMT was possible via transient response analysis of 2DEG carrier by using the proposed method.

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GaN-Based Field-Effect Transistors With Laterally Gated Two-Dimensional Electron Gas

Cited by 34 publications

References 14 publications

Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs

Influence of fin width and gate structure on the performance of AlGaN/GaN fin‐shaped HEMTs

On the Dynamic Performance of Laterally Gated Transistors

Analysis of Drain Current Transient Response of Gate Pulse Voltage in AlGaN / GaN High Electron Mobility Transistors

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