The influence of hydrogen plasma treatment before atomic layer deposition of aluminum oxide on In 0:53 Ga 0:47 As is investigated. Experiments on untreated, trimethylaluminum-treated, hydrogen-plasma treated, and iterative hydrogen plasma/trimethylaluminum-treated samples are compared in the context of interface trap density, D it . Through the conductance method, it was found that five cycles of two s, 20 mT, 100 W hydrogen plasma alternating with 40 msS of trimethylaluminum dose prior to dielectric growth resulted in a reduction of interface trap density (0.2 eV below the conduction band edge) from 4:6 Â 10 12 eV À1 cm À2 for untreated samples to 1:7 Â 10 12 eV À1 cm À2 for treated samples.

The influence of different gate metal deposition processes on the electrical characteristics of dielectric/III-V interfaces is investigated. Al 2 O 3 and HfO 2 dielectrics are grown on In 0.53 Ga 0.47 As channels and top metal electrodes are deposited by either thermal evaporation or electron beam deposition. It is shown that metal-oxide-semiconductor capacitors with electron beam evaporated electrodes exhibit substantially larger midgap interface trap densities than those with thermally evaporated electrodes. The damage caused by electron beam metallization can be mitigated by subsequent, long anneals in forming gas.

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Generally, in scanning electron microscopy (SEM) imaging, it is desirable that a high-resolution image be composed mainly of those secondary electrons (SEs) generated by the primary electron beam, denoted SE(I) . However, in conventional SEM imaging, other, often unwanted, signal components consisting of backscattered electrons (BSEs), and their associated SEs, denoted SE(II) , are present; these signal components contribute a random background signal that degrades contrast, and therefore signal-to-noise ratio and resolution. Ideally, the highest resolution SEM image would consist only of the SE(I) component. In SEMs that use conventional pinhole lenses and their associated Everhart-Thornley detectors, the image is composed of several components, including SE(I) , SE(II) , and some BSE, depending on the geometry of the detector. Modern snorkel lens systems eliminate the BSEs, but not the SE(II) s. We present a microfabricated diaphragm for minimizing the unwanted SE(II) signal components. We present evidence of improved imaging using a microlithographically generated pattern of Au, about 500 nm thick, that blocks most of the undesired signal components, leaving an image composed mostly of SE(I) s. We refer to this structure as a "spatial backscatter diaphragm."