Al$_{2}$O$_{3}$ Growth on (100) In$_{0.53}$Ga$_{0.47}$As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures

Carter, Andrew D.; Mitchell, William J.; Thibeault, B.J.; Law, Jeremy J. M.; Rodwell, M.J.W.

doi:10.1143/apex.4.091102

Cited by 49 publications

(41 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…16 This effect is well documented on other III-V materials, as well. [17][18][19][20] In this study, both ex situ wet cleans and in situ dry cleaning combinations were investigated to better understand the underlying atomiclevel interactions at play.…”

Section: Introductionmentioning

confidence: 99%

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

Kerr

Chagarov

et al. 2014

The Journal of Chemical Physics

View full text Add to dashboard Cite

A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al 2 O 3 gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001).

show abstract

Section: Introductionmentioning

confidence: 99%

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

Kerr

Chagarov

et al. 2014

The Journal of Chemical Physics

View full text Add to dashboard Cite

show abstract

“…To reduce the large trap densities at interfaces between In 0.53 Ga 0.47 As and the gate dielectric (typically Al 2 O 3 or HfO 2 ), various surface preparation and passivation methods are currently being investigated. [1][2][3][4][5][6][7][8][9] Interface trap densities (D it ), at least around midgap, are relatively straight-forward to detect for In 0.53 Ga 0.47 As, because of its narrow band gap (0.75 eV (Ref. 10)); they cause, for example, a frequency-dependent hump in the depletion region of capacitance-voltage (CV) characteristics, 11,12 and peaks in normalized conductance maps.…”

Section: Introductionmentioning

confidence: 99%

Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

Chobpattana

Mates

Mitchell

et al. 2013

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

We report on the influence of variations in the process parameters of an in-situ surface cleaning procedure, consisting of alternating cycles of nitrogen plasma and trimethylaluminum dosing, on the interface trap density of highly scaled HfO2 gate dielectrics deposited on n-In0.53Ga0.47As by atomic layer deposition. We discuss the interface chemistry of stacks resulting from the pre-deposition exposure to nitrogen plasma/trimethylaluminum cycles. Measurements of interface trap densities, interface chemistry, and surface morphology show that variations in the cleaning process have a large effect on nucleation and surface coverage, which in turn are crucial for achieving low interface state densities.

show abstract

“…The detailed fabrication procedure has been described elsewhere. 30 The conductance is the equivalent parallel conductance extracted from the measured device admittance. 15,31 a) Author to whom correspondence should be addressed.…”

mentioning

confidence: 99%

Frequency dispersion in III-V metal-oxide-semiconductor capacitors

Stemmer

Chobpattana

Rajan

2012

Applied Physics Letters

View full text Add to dashboard Cite

A recombination-controlled tunneling model is used to explain the strong frequency dispersion seen in the accumulation capacitance and conductance of dielectric/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors. In this model, the parallel conductance is large when, at positive gate biases, the metal Fermi level lines up with a large density of interface states in the In0.53Ga0.47As band gap. It is shown that the model explains in a semi-quantitative manner the experimentally observed capacitor characteristics, including a peak in parallel conductance/frequency (Gp/ω) versus log frequency curves at positive gate bias and the dependence of the frequency dispersion on the dielectric thickness.

show abstract

Al$_{2}$O$_{3}$ Growth on (100) In$_{0.53}$Ga$_{0.47}$As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures

Cited by 49 publications

References 19 publications

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

Frequency dispersion in III-V metal-oxide-semiconductor capacitors

Contact Info

Product

Resources

About