Reduction of leakage current in In_0.53Ga_0.47As channel metal-oxide-semiconductor field-effect-transistors using AlAs_0.56Sb_0.44 confinement layers

Abstract

Articles you may be interested inTwo dimensional electron transport in modulation-doped In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells J. Appl. Phys. 115, 123711 (2014); 10.1063/1.4869498 High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effecttransistors by in-situ atomic-layer-deposited HfO2 Appl. Phys. Lett. 103, 253509 (2013); 10.1063/1.4852975 High performance raised source/drain InAs/In0.53Ga0.47As channel metal-oxide-semiconductor field-effecttransistors with reduced leakage using a vertical spacer Appl. Phys. Lett. 103, 233503 (2013); 10.1063/1.4838660 Exciton spin relaxation in In0.53Ga0.47As/AlAs0.56Sb0.44 quantum wells Appl. Phys. Lett. 100, 092401 (2012); 10.1063/1.3690833Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors

A review of InP/InAlAs/InGaAs based transistors for high frequency applications

“…Although the InGaAs MOSFETs [167,168] do not show as good short-channel effect as InAs HEMT [169] with t ins = 4 nm due to larger EOT, the InGaAs MOSFET design should ultimately have better scalability as the top barrier and oxide layer thickness are reduced [167]. InGaAs channel MOSFETs have recently emerged as the most promising non-Si n-channel device for next generation nano scale CMOS.…”

Poisson-Schroedinger-Continuity two-dimensional analysis of both short (ballistic) and long (drift-diffusion) III–V FETs

“…Such expectations are based on the superior mobilities of these materials as summarized in detail in [1]. The research activity in these type of devices has been intense [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. Originally the focus was on inversion type devices [2][3] but very soon these type of III-V FETs were abandoned in favor of devices with intrinsic channels filled with electrons from a supply layer [4][5][6][7][8][9][10][11][12].…”

Low Power III&#x2013;V InGaAs MOSFETs featuring InP recessed source/drain spacers with I<inf>on</inf>=120 &#x00B5;A/&#x00B5;m at I<inf>off</inf>=1 nA/&#x00B5;m and V<inf>DS</inf>=0.5 V

“…1 shows a progression of III-V MOSFETs designs for reduced I off . P-doped InAlAs or wider-bandgap AlAsSb back barriers reduce back barrier leakage currents [13]. Particularly for InAs, with its small band gap, BTBT leakage arises primarily in the high field region, either at the drain end of the channel next to the gate edge or at the junction between the channel and the regrown heavily-doped drain [14].…”