No abstract

No abstract

We demonstrate raised source/drain InAs/In 0.53 Ga 0.47 As metal-oxide-semiconductor fieldeffect-transistors incorporating a vertical spacer in the high-field region between the channel and the drain. The spacer significantly reduces off-state leakage at a high drain bias (V DS) without increasing the source/drain contact pitch. Subsequently, thinning the InAs layer within the channel further reduces the off-state leakage and subthreshold swing (SS). At $60 nm gate length and V DS ¼ 0.5 V, devices with a 6 nm/3 nm InAs/In 0.53 Ga 0.47 As channel show 2.7 mS/lm peak transconductance (g m) and 125 mV/dec SS, while devices with a 4.5 nm/3 nm InAs/In 0.53 Ga 0.47 As channel show 2.4 mS/lm peak g m and 96 mV/dec SS. V

A molecular beam epitaxy-grown InGaAsSb p–n photodetector lattice matched to GaSb for extended short wave infrared is reported. Electrical and optical characteristics were analyzed at temperatures from 200 K to room temperature. The photodetectors exhibit dark current densities of 2.9 × 10−6 A/cm2 at 200 K and 4.6 mA/cm2 at 300 K (−0.1 V bias) and a high quantum efficiency of 73% at room temperature under front side illumination. High detectivity (D*) values of 2.2 × 1010 cm·Hz1/2 W−1 and 7.4 × 1011 cm·Hz1/2 W−1 were observed at 200 K and room temperature, respectively.

Articles you may be interested inTwo dimensional electron transport in modulation-doped In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells J. Appl. Phys. 115, 123711 (2014); 10.1063/1.4869498 High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effecttransistors by in-situ atomic-layer-deposited HfO2 Appl. Phys. Lett. 103, 253509 (2013); 10.1063/1.4852975 High performance raised source/drain InAs/In0.53Ga0.47As channel metal-oxide-semiconductor field-effecttransistors with reduced leakage using a vertical spacer Appl. Phys. Lett. 103, 233503 (2013); 10.1063/1.4838660 Exciton spin relaxation in In0.53Ga0.47As/AlAs0.56Sb0.44 quantum wells Appl. Phys. Lett. 100, 092401 (2012); 10.1063/1.3690833Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors